Structure and composition of bismuth telluride topological insulators grown by molecular beam epitaxy

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F14%3A10284293" target="_blank" >RIV/00216208:11320/14:10284293 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216224:14740/14:00079372

Výsledek na webu

<a href="http://dx.doi.org/10.1107/S1600576714020445" target="_blank" >http://dx.doi.org/10.1107/S1600576714020445</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1107/S1600576714020445" target="_blank" >10.1107/S1600576714020445</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Structure and composition of bismuth telluride topological insulators grown by molecular beam epitaxy

Popis výsledku v původním jazyce

The structure and composition of Bi2Te3-delta topological insulator layers grown by molecular beam epitaxy is studied as a function of beam flux composition. It is demonstrated that, depending on the Te/Bi2Te3 flux ratio, different layer compositions areobtained corresponding to a Te deficit delta varying between 0 and 1. On the basis of X-ray diffraction analysis and a theoretical description using a random stacking model, it is shown that for delta }= 0 the structure of the epilayers is described well by a random stacking of Te-Bi-Te-Bi-Te quintuple layers and Bi-Bi bilayers sharing the same basic hexagonal lattice structure. The random stacking model accounts for the observed surface step structure of the layers and compares very well with the measured X-ray data, from which the lattice parameters a and c as a function of the chemical composition were deduced. In particular, the in-plane lattice parameter a is found to continuously increase and the average distance of the (0001) he

Název v anglickém jazyce

Structure and composition of bismuth telluride topological insulators grown by molecular beam epitaxy

Popis výsledku anglicky

The structure and composition of Bi2Te3-delta topological insulator layers grown by molecular beam epitaxy is studied as a function of beam flux composition. It is demonstrated that, depending on the Te/Bi2Te3 flux ratio, different layer compositions areobtained corresponding to a Te deficit delta varying between 0 and 1. On the basis of X-ray diffraction analysis and a theoretical description using a random stacking model, it is shown that for delta }= 0 the structure of the epilayers is described well by a random stacking of Te-Bi-Te-Bi-Te quintuple layers and Bi-Bi bilayers sharing the same basic hexagonal lattice structure. The random stacking model accounts for the observed surface step structure of the layers and compares very well with the measured X-ray data, from which the lattice parameters a and c as a function of the chemical composition were deduced. In particular, the in-plane lattice parameter a is found to continuously increase and the average distance of the (0001) he

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GA14-08124S" target="_blank" >GA14-08124S: Rtg difraktometrie s vysokým rozlišením náhodných vrstevnatých systémů</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Applied Crystallography

ISSN

0021-8898

e-ISSN

—

Svazek periodika

47

Číslo periodika v rámci svazku

6

Stát vydavatele periodika

DK - Dánské království

Počet stran výsledku

12

Strana od-do

1889-1900

Kód UT WoS článku

000345877900010

EID výsledku v databázi Scopus

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