Planar Edge Schottky Barrier-Tunneling Transistors Using Epitaxial Graphene/SiC Junctions

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F14%3A10288690" target="_blank" >RIV/00216208:11320/14:10288690 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1021/nl502069d" target="_blank" >http://dx.doi.org/10.1021/nl502069d</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/nl502069d" target="_blank" >10.1021/nl502069d</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Planar Edge Schottky Barrier-Tunneling Transistors Using Epitaxial Graphene/SiC Junctions

Popis výsledku v původním jazyce

A purely planar graphene/SiC field effect transistor is presented here. The horizontal current flow over one-dimensional tunneling barrier between planar graphene contact and coplanar two-dimensional SiC channel exhibits superior on/off ratio compared toconventional transistors employing vertical electron transport. Multilayer epitaxial graphene (MEG) grown on SiC(000 (1) over bar) was adopted as the transistor source and drain. The channel is formed by the accumulation layer at the interface of semi-insulating SiC and a surface silicate that forms after high vacuum high temperature annealing. Electronic bands between the graphene edge and SiC accumulation layer form a thin Schottky barrier, which is dominated by tunneling at low temperatures. A thermionic emission prevails over tunneling at high temperatures. We show that neglecting tunneling effectively causes the temperature dependence of the Schottky barrier height. The channel can support current densities up to 35 A/m.

Název v anglickém jazyce

Planar Edge Schottky Barrier-Tunneling Transistors Using Epitaxial Graphene/SiC Junctions

Popis výsledku anglicky

A purely planar graphene/SiC field effect transistor is presented here. The horizontal current flow over one-dimensional tunneling barrier between planar graphene contact and coplanar two-dimensional SiC channel exhibits superior on/off ratio compared toconventional transistors employing vertical electron transport. Multilayer epitaxial graphene (MEG) grown on SiC(000 (1) over bar) was adopted as the transistor source and drain. The channel is formed by the accumulation layer at the interface of semi-insulating SiC and a surface silicate that forms after high vacuum high temperature annealing. Electronic bands between the graphene edge and SiC accumulation layer form a thin Schottky barrier, which is dominated by tunneling at low temperatures. A thermionic emission prevails over tunneling at high temperatures. We show that neglecting tunneling effectively causes the temperature dependence of the Schottky barrier height. The channel can support current densities up to 35 A/m.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nano Letters

ISSN

1530-6984

e-ISSN

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Svazek periodika

14

Číslo periodika v rámci svazku

9

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

6

Strana od-do

5170-5175

Kód UT WoS článku

000341544500038

EID výsledku v databázi Scopus

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