Monolayer Twisted Graphene-Based Schottky Transistor
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F46747885%3A24210%2F21%3A00008895" target="_blank" >RIV/46747885:24210/21:00008895 - isvavai.cz</a>
Nalezeny alternativní kódy
RIV/46747885:24620/21:00008895
Výsledek na webu
<a href="https://www.mdpi.com/1996-1944/14/15/4109/htm" target="_blank" >https://www.mdpi.com/1996-1944/14/15/4109/htm</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.3390/ma14154109" target="_blank" >10.3390/ma14154109</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Monolayer Twisted Graphene-Based Schottky Transistor
Popis výsledku v původním jazyce
The outstanding properties of graphene-based components, such as twisted graphene, motivates nanoelectronic researchers to focus on their applications in device technology. Twisted graphene as a new class of graphene structures is investigated in the platform of transistor application in this research study. Therefore, its geometry effect on Schottky transistor operation is analyzed and the relationship between the diameter of twist and number of twists are explored. A metal–semiconductor–metal twisted graphene-based junction as a Schottky transistor is considered. By employing the dispersion relation and quantum tunneling the variation of transistor performance under channel length, the diameter of twisted graphene, and the number of twists deviation are studied. The results show that twisted graphene with a smaller diameter affects the efficiency of twisted graphene-based Schottky transistors. Additionally, as another main characteristic, the ID-VGS is explored, which indicates that the threshold voltage is increased by diameter and number of twists in this type of transistor.
Název v anglickém jazyce
Monolayer Twisted Graphene-Based Schottky Transistor
Popis výsledku anglicky
The outstanding properties of graphene-based components, such as twisted graphene, motivates nanoelectronic researchers to focus on their applications in device technology. Twisted graphene as a new class of graphene structures is investigated in the platform of transistor application in this research study. Therefore, its geometry effect on Schottky transistor operation is analyzed and the relationship between the diameter of twist and number of twists are explored. A metal–semiconductor–metal twisted graphene-based junction as a Schottky transistor is considered. By employing the dispersion relation and quantum tunneling the variation of transistor performance under channel length, the diameter of twisted graphene, and the number of twists deviation are studied. The results show that twisted graphene with a smaller diameter affects the efficiency of twisted graphene-based Schottky transistors. Additionally, as another main characteristic, the ID-VGS is explored, which indicates that the threshold voltage is increased by diameter and number of twists in this type of transistor.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
20500 - Materials engineering
Návaznosti výsledku
Projekt
<a href="/cs/project/EF16_025%2F0007293" target="_blank" >EF16_025/0007293: Modulární platforma pro autonomní podvozky specializovaných elektrovozidel pro dopravu nákladu a zařízení</a><br>
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Ostatní
Rok uplatnění
2021
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Materials
ISSN
1996-1944
e-ISSN
—
Svazek periodika
14
Číslo periodika v rámci svazku
15
Stát vydavatele periodika
CH - Švýcarská konfederace
Počet stran výsledku
11
Strana od-do
1-11
Kód UT WoS článku
000682053400001
EID výsledku v databázi Scopus
2-s2.0-85111703565