Controlled epitaxial graphene growth within removable amorphous carbon corrals

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F14%3A10288699" target="_blank" >RIV/00216208:11320/14:10288699 - isvavai.cz</a>

Výsledek na webu

<a href="http://scitation.aip.org/content/aip/journal/apl/105/2/10.1063/1.4890499" target="_blank" >http://scitation.aip.org/content/aip/journal/apl/105/2/10.1063/1.4890499</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/1.4890499" target="_blank" >10.1063/1.4890499</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Controlled epitaxial graphene growth within removable amorphous carbon corrals

Popis výsledku v původním jazyce

We address the question of control of the silicon carbide (SiC) steps and terraces under epitaxial graphene on SiC and demonstrate amorphous carbon (aC) corrals as an ideal method to pin SiC surface steps. aC is compatible with graphene growth, structurally stable at high temperatures, and can be removed after graphene growth. For this, aC is first evaporated and patterned on SiC, then annealed in the graphene growth furnace. There at temperatures above 1200 degrees C, mobile SiC steps accumulate at theaC corral that provide effective step flow barriers. Aligned step free regions are thereby formed for subsequent graphene growth at temperatures above 1330 degrees C. Atomic force microscopy imaging supports the formation of step-free terraces on SiC with the step morphology aligned to the aC corrals. Raman spectroscopy indicates the presence of good graphene sheets on the step-free terraces.

Název v anglickém jazyce

Controlled epitaxial graphene growth within removable amorphous carbon corrals

Popis výsledku anglicky

We address the question of control of the silicon carbide (SiC) steps and terraces under epitaxial graphene on SiC and demonstrate amorphous carbon (aC) corrals as an ideal method to pin SiC surface steps. aC is compatible with graphene growth, structurally stable at high temperatures, and can be removed after graphene growth. For this, aC is first evaporated and patterned on SiC, then annealed in the graphene growth furnace. There at temperatures above 1200 degrees C, mobile SiC steps accumulate at theaC corral that provide effective step flow barriers. Aligned step free regions are thereby formed for subsequent graphene growth at temperatures above 1330 degrees C. Atomic force microscopy imaging supports the formation of step-free terraces on SiC with the step morphology aligned to the aC corrals. Raman spectroscopy indicates the presence of good graphene sheets on the step-free terraces.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Physics Letters

ISSN

0003-6951

e-ISSN

—

Svazek periodika

105

Číslo periodika v rámci svazku

2

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

5

Strana od-do

1-5

Kód UT WoS článku

000341151400064

EID výsledku v databázi Scopus

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