Synthesis of graphene on SiC substrate via Ni-silicidation reactions

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F12%3A43894326" target="_blank" >RIV/60461373:22310/12:43894326 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/60461373:22810/12:43894326

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.tsf.2012.03.105" target="_blank" >http://dx.doi.org/10.1016/j.tsf.2012.03.105</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.tsf.2012.03.105" target="_blank" >10.1016/j.tsf.2012.03.105</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Synthesis of graphene on SiC substrate via Ni-silicidation reactions

Popis výsledku v původním jazyce

In this work, the features of graphene layers are studied with the aim of preparing the thinnest layers possible. The graphene layers were prepared by the annealing of Ni/SiC structures. The main advantage of this process is a relatively low temperaturecompared with the method of graphene epitaxial growth on SiC and short annealing times compared with the chemical vapor deposition method. We prepared graphene layers from several Ni/SiC structures in which the Ni layer thickness ranged from 1 to 200 nm.The parameters of the annealing process (temperature, rate of temperature increase, annealing time) were modified during the experiments. The formed graphene layers were analyzed by means of Raman spectroscopy. From the spectra, the basic parameters ofgraphene, such as the number of carbon layers and crystallinity. were determined. The annealing of the Ni(200 nm)/SiC structure at 1080 degrees C for 10 s, produced graphene in the form of 3-4 carbon monolayers. The value was verified by

Název v anglickém jazyce

Synthesis of graphene on SiC substrate via Ni-silicidation reactions

Popis výsledku anglicky

In this work, the features of graphene layers are studied with the aim of preparing the thinnest layers possible. The graphene layers were prepared by the annealing of Ni/SiC structures. The main advantage of this process is a relatively low temperaturecompared with the method of graphene epitaxial growth on SiC and short annealing times compared with the chemical vapor deposition method. We prepared graphene layers from several Ni/SiC structures in which the Ni layer thickness ranged from 1 to 200 nm.The parameters of the annealing process (temperature, rate of temperature increase, annealing time) were modified during the experiments. The formed graphene layers were analyzed by means of Raman spectroscopy. From the spectra, the basic parameters ofgraphene, such as the number of carbon layers and crystallinity. were determined. The annealing of the Ni(200 nm)/SiC structure at 1080 degrees C for 10 s, produced graphene in the form of 3-4 carbon monolayers. The value was verified by

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JJ - Ostatní materiály

OECD FORD obor

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Projekt

<a href="/cs/project/GAP108%2F11%2F0894" target="_blank" >GAP108/11/0894: Růst a zpracování gafenových vrstev na karbidu křemíku</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Thin Solid Films

ISSN

0040-6090

e-ISSN

—

Svazek periodika

520

Číslo periodika v rámci svazku

16

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

4

Strana od-do

5215-5218

Kód UT WoS článku

000305719000019

EID výsledku v databázi Scopus

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