HAXPES study of CeOx thin film-silicon oxide interface

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F14%3A10288967" target="_blank" >RIV/00216208:11320/14:10288967 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.apsusc.2014.02.048" target="_blank" >http://dx.doi.org/10.1016/j.apsusc.2014.02.048</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2014.02.048" target="_blank" >10.1016/j.apsusc.2014.02.048</a>

Jazyk výsledku

angličtina

Název v původním jazyce

HAXPES study of CeOx thin film-silicon oxide interface

Popis výsledku v původním jazyce

Investigation of cerium oxide thin film deposition on silicon and silicon oxide is important due to many possible applications of cerium oxide based micro-systems in electronics and catalysis. rf-Magnetron sputtering is technologically the most suitablemethod of preparation of such systems. Mechanism of film growth is strongly influenced by interaction of Ce atoms with the substrate and their oxidation by oxygen containing rf plasma. We show using hard X-ray photoelectron spectroscopy with high information depth that cerium is reducing silicon oxide by forming complex silicate phase at the interface with Ce in the 3+ state. For this reason composition of very thin films of cerium oxide is strongly influenced by thin film-substrate interaction. A coating of the silicon oxide substrate by an intermediate thin carbon film provides conductive substrate for electrocatalytic applications and decreases the silicon oxide substrates-cerium oxide interaction essentially. (C) 2014 Elsevier B.V.

Název v anglickém jazyce

HAXPES study of CeOx thin film-silicon oxide interface

Popis výsledku anglicky

Investigation of cerium oxide thin film deposition on silicon and silicon oxide is important due to many possible applications of cerium oxide based micro-systems in electronics and catalysis. rf-Magnetron sputtering is technologically the most suitablemethod of preparation of such systems. Mechanism of film growth is strongly influenced by interaction of Ce atoms with the substrate and their oxidation by oxygen containing rf plasma. We show using hard X-ray photoelectron spectroscopy with high information depth that cerium is reducing silicon oxide by forming complex silicate phase at the interface with Ce in the 3+ state. For this reason composition of very thin films of cerium oxide is strongly influenced by thin film-substrate interaction. A coating of the silicon oxide substrate by an intermediate thin carbon film provides conductive substrate for electrocatalytic applications and decreases the silicon oxide substrates-cerium oxide interaction essentially. (C) 2014 Elsevier B.V.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Surface Science

ISSN

0169-4332

e-ISSN

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Svazek periodika

303

Číslo periodika v rámci svazku

červen

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

8

Strana od-do

46-53

Kód UT WoS článku

000334293200007

EID výsledku v databázi Scopus

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