Optical emission from SiO2-embedded silicon nanocrystals: A high-pressure Raman and photoluminescence study
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F15%3A10314729" target="_blank" >RIV/00216208:11320/15:10314729 - isvavai.cz</a>
Výsledek na webu
<a href="http://dx.doi.org/10.1103/PhysRevB.92.035432" target="_blank" >http://dx.doi.org/10.1103/PhysRevB.92.035432</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1103/PhysRevB.92.035432" target="_blank" >10.1103/PhysRevB.92.035432</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Optical emission from SiO2-embedded silicon nanocrystals: A high-pressure Raman and photoluminescence study
Popis výsledku v původním jazyce
We investigate the optical properties of high-quality Si nanocrystals (NCs)/SiO2 multilayers under high hydrostatic pressure with Raman scattering and photoluminescence (PL) measurements. The aim of our study is to shed light on the origin of the opticalemission of the Si NCs/SiO2. The Si NCs were produced by chemical-vapor deposition of Si-rich oxynitride (SRON)/SiO2 multilayers with 5- and 4-nm SRON layer thicknesses on fused silica substrates and subsequent annealing at 1150 degrees C, which resulted in the precipitation of Si NCs with an average size of 4.1 and 3.3 nm, respectively. From the pressure dependence of the Raman spectra we extract a phonon pressure coefficient of 8.5 +/- 0.3 cm(-1)/GPa in both samples, notably higher than that of bulkSi (5.1 cm(-1)/GPa). This result is ascribed to a strong pressure amplification effect due to the larger compressibility of the SiO2 matrix. In turn, the PL spectra exhibit two markedly different contributions: a higher-energy band that r
Název v anglickém jazyce
Optical emission from SiO2-embedded silicon nanocrystals: A high-pressure Raman and photoluminescence study
Popis výsledku anglicky
We investigate the optical properties of high-quality Si nanocrystals (NCs)/SiO2 multilayers under high hydrostatic pressure with Raman scattering and photoluminescence (PL) measurements. The aim of our study is to shed light on the origin of the opticalemission of the Si NCs/SiO2. The Si NCs were produced by chemical-vapor deposition of Si-rich oxynitride (SRON)/SiO2 multilayers with 5- and 4-nm SRON layer thicknesses on fused silica substrates and subsequent annealing at 1150 degrees C, which resulted in the precipitation of Si NCs with an average size of 4.1 and 3.3 nm, respectively. From the pressure dependence of the Raman spectra we extract a phonon pressure coefficient of 8.5 +/- 0.3 cm(-1)/GPa in both samples, notably higher than that of bulkSi (5.1 cm(-1)/GPa). This result is ascribed to a strong pressure amplification effect due to the larger compressibility of the SiO2 matrix. In turn, the PL spectra exhibit two markedly different contributions: a higher-energy band that r
Klasifikace
Druh
J<sub>x</sub> - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
CEP obor
BH - Optika, masery a lasery
OECD FORD obor
—
Návaznosti výsledku
Projekt
—
Návaznosti
R - Projekt Ramcoveho programu EK
Ostatní
Rok uplatnění
2015
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Physical Review B - Condensed Matter and Materials Physics
ISSN
1098-0121
e-ISSN
—
Svazek periodika
92
Číslo periodika v rámci svazku
3
Stát vydavatele periodika
US - Spojené státy americké
Počet stran výsledku
7
Strana od-do
—
Kód UT WoS článku
000358601000007
EID výsledku v databázi Scopus
2-s2.0-84939211024