Bright trions in direct-bandgap silicon nanocrystals revealed by low-temperature single-nanocrystal spectroscopy

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F15%3A10314730" target="_blank" >RIV/00216208:11320/15:10314730 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/15:00456406

Výsledek na webu

<a href="http://dx.doi.org/10.1038/lsa.2015.109" target="_blank" >http://dx.doi.org/10.1038/lsa.2015.109</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1038/lsa.2015.109" target="_blank" >10.1038/lsa.2015.109</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Bright trions in direct-bandgap silicon nanocrystals revealed by low-temperature single-nanocrystal spectroscopy

Popis výsledku v původním jazyce

Strain-engineered silicon nanocrystals (SiNCs) have recently been shown to possess direct bandgap. Here, we report the observation of a rich structure in the single-nanocrystal photoluminescence spectra of strain-engineered direct-bandgap SiNCs in the temperature range of 9-300 K. The relationship between individual types of spectra is discussed, and the numerical modeling of spectral diffusion of the experimentally acquired spectra reveals a common origin for most types. The intrinsic spectral shape isshown to be a structure that contains three peaks, approximately 150 meV apart, each of which possesses a Si phonon substructure. Narrow spectral lines, reaching <= 1 meV at 20 K, are detected. The observed temperature dependence of the spectral structure can be assigned to the radiative recombination of positively charged trions, in contrast to several previous reports linking a very similar shape to phonons in the surface capping layers. Our result serves as strong additional support

Název v anglickém jazyce

Bright trions in direct-bandgap silicon nanocrystals revealed by low-temperature single-nanocrystal spectroscopy

Popis výsledku anglicky

Strain-engineered silicon nanocrystals (SiNCs) have recently been shown to possess direct bandgap. Here, we report the observation of a rich structure in the single-nanocrystal photoluminescence spectra of strain-engineered direct-bandgap SiNCs in the temperature range of 9-300 K. The relationship between individual types of spectra is discussed, and the numerical modeling of spectral diffusion of the experimentally acquired spectra reveals a common origin for most types. The intrinsic spectral shape isshown to be a structure that contains three peaks, approximately 150 meV apart, each of which possesses a Si phonon substructure. Narrow spectral lines, reaching <= 1 meV at 20 K, are detected. The observed temperature dependence of the spectral structure can be assigned to the radiative recombination of positively charged trions, in contrast to several previous reports linking a very similar shape to phonons in the surface capping layers. Our result serves as strong additional support

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BH - Optika, masery a lasery

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Light-Science &amp; Applications

ISSN

2047-7538

e-ISSN

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Svazek periodika

4

Číslo periodika v rámci svazku

09 October 2015

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

8

Strana od-do

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Kód UT WoS článku

000365013600001

EID výsledku v databázi Scopus

2-s2.0-84943752672