Positron annihilation spectroscopy of vacancy-related defects in CdTe:Cl and CdZnTe:Ge at different stoichiometry deviations

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F16%3A10328937" target="_blank" >RIV/00216208:11320/16:10328937 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1038/srep20641" target="_blank" >http://dx.doi.org/10.1038/srep20641</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1038/srep20641" target="_blank" >10.1038/srep20641</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Positron annihilation spectroscopy of vacancy-related defects in CdTe:Cl and CdZnTe:Ge at different stoichiometry deviations

Popis výsledku v původním jazyce

Positron annihilation spectroscopy (PAS) was used to examine the effect of defined Cd-rich and Te-rich annealing on point defects in Cl-doped CdTe and Ge-doped CdZnTe semi-insulating single crystals. The as-grown crystals contain open-volume defects connected with Cd vacancies (V-Cd). It was found that the Cd vacancies agglomerate into clusters coupled with Cl in CdTe: Cl, and in CdZnTe: Ge they are coupled with Ge donors. While annealing in Cd pressure reduces of the VCd density, subsequent annealing in Te pressure restores V-Cd. The CdTe: Cl contains negatively-charged shallow traps interpreted as Rydberg states of (VCdClTe) A-centres and representing the major positron trapping sites at low temperature. Positrons confined in the shallow traps exhibit lifetime, which is shorter than the CdTe bulk lifetime. Interpretation of the PAS data was successfully combined with electrical resistivity, Hall effect measurements and chemical analysis, and allowed us to determine the principal point defect densities.

Název v anglickém jazyce

Positron annihilation spectroscopy of vacancy-related defects in CdTe:Cl and CdZnTe:Ge at different stoichiometry deviations

Popis výsledku anglicky

Positron annihilation spectroscopy (PAS) was used to examine the effect of defined Cd-rich and Te-rich annealing on point defects in Cl-doped CdTe and Ge-doped CdZnTe semi-insulating single crystals. The as-grown crystals contain open-volume defects connected with Cd vacancies (V-Cd). It was found that the Cd vacancies agglomerate into clusters coupled with Cl in CdTe: Cl, and in CdZnTe: Ge they are coupled with Ge donors. While annealing in Cd pressure reduces of the VCd density, subsequent annealing in Te pressure restores V-Cd. The CdTe: Cl contains negatively-charged shallow traps interpreted as Rydberg states of (VCdClTe) A-centres and representing the major positron trapping sites at low temperature. Positrons confined in the shallow traps exhibit lifetime, which is shorter than the CdTe bulk lifetime. Interpretation of the PAS data was successfully combined with electrical resistivity, Hall effect measurements and chemical analysis, and allowed us to determine the principal point defect densities.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GAP108%2F11%2F0958" target="_blank" >GAP108/11/0958: Výzkum bodových defektů v ZnO a studium jejich interakce s vodíkem a dusíkem</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Scientific Reports

ISSN

2045-2322

e-ISSN

—

Svazek periodika

6

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

16

Strana od-do

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Kód UT WoS článku

000369742600001

EID výsledku v databázi Scopus

2-s2.0-84958078684