Deep levels in high resistive CdTe and CdZnTe explored by photo-Hall effect and photoluminescence spectroscopy

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F17%3A10363430" target="_blank" >RIV/00216208:11320/17:10363430 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1088/0268-1242/32/1/015002" target="_blank" >http://dx.doi.org/10.1088/0268-1242/32/1/015002</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/0268-1242/32/1/015002" target="_blank" >10.1088/0268-1242/32/1/015002</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Deep levels in high resistive CdTe and CdZnTe explored by photo-Hall effect and photoluminescence spectroscopy

Popis výsledku v původním jazyce

High resistive CdTe and CdZnTe single crystals were measured by photo-Hall effect spectroscopy (PHES) and photoluminescence spectroscopy (PL) with the aim of discovering the position of deep levels (DLs) in the band gap. Illumination in the range of 0.65-1.77 eV, room temperature, and DC electrical measurements were used in the case of PHES. Low temperature (4K) photoluminescence spectra were recorded in the spectral range above 0.47 eV. Eight samples, both n-type and p-type, were studied and typical shapes of spectra were collected, compared and interpreted for both spectroscopy methods. It was shown that a simple single-level model of PHES often fails in the interpretation of DLs distant from the midgap. Eight DLs with the energy E-c - 0.65 eV, E-c - 0.8 eV, Ec - 0.9 eV, E-c - (1.10-1.15) eV, E-v + 0.70 eV, E-v + 0.85 eV, E-v + 1.0 eV, and E-c - 1.25 eV were interpreted. A memory effect characterized by a relaxation time of about 60 s was observed at the 0.8 eV level and allowed us to determine the 1.7. x. 10(-17) cm(2) capture cross-section of electrons on this level. It is argued that PHES is a convenient complementary method to identify and characterize DLs, including DLs inaccessible by thermal emission techniques. DLs observed by PHES were consistently verified by PL.

Název v anglickém jazyce

Deep levels in high resistive CdTe and CdZnTe explored by photo-Hall effect and photoluminescence spectroscopy

Popis výsledku anglicky

High resistive CdTe and CdZnTe single crystals were measured by photo-Hall effect spectroscopy (PHES) and photoluminescence spectroscopy (PL) with the aim of discovering the position of deep levels (DLs) in the band gap. Illumination in the range of 0.65-1.77 eV, room temperature, and DC electrical measurements were used in the case of PHES. Low temperature (4K) photoluminescence spectra were recorded in the spectral range above 0.47 eV. Eight samples, both n-type and p-type, were studied and typical shapes of spectra were collected, compared and interpreted for both spectroscopy methods. It was shown that a simple single-level model of PHES often fails in the interpretation of DLs distant from the midgap. Eight DLs with the energy E-c - 0.65 eV, E-c - 0.8 eV, Ec - 0.9 eV, E-c - (1.10-1.15) eV, E-v + 0.70 eV, E-v + 0.85 eV, E-v + 1.0 eV, and E-c - 1.25 eV were interpreted. A memory effect characterized by a relaxation time of about 60 s was observed at the 0.8 eV level and allowed us to determine the 1.7. x. 10(-17) cm(2) capture cross-section of electrons on this level. It is argued that PHES is a convenient complementary method to identify and characterize DLs, including DLs inaccessible by thermal emission techniques. DLs observed by PHES were consistently verified by PL.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GA16-23165S" target="_blank" >GA16-23165S: Příprava elektrických kontaktů na detektorech záření CdTe a CdZnTe</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Semiconductor Science and Technology

ISSN

0268-1242

e-ISSN

—

Svazek periodika

32

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

9

Strana od-do

—

Kód UT WoS článku

000396551500002

EID výsledku v databázi Scopus

2-s2.0-85007197366