Photo-Hall-Effect Spectroscopy with Enhanced Illumination in p-Cd1-xMnxTe Showing Negative Differential Photoconductivity

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F18%3A10387721" target="_blank" >RIV/00216208:11320/18:10387721 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68081723:_____/18:00495568

Výsledek na webu

<a href="https://doi.org/10.1103/PhysRevApplied.10.014019" target="_blank" >https://doi.org/10.1103/PhysRevApplied.10.014019</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1103/PhysRevApplied.10.014019" target="_blank" >10.1103/PhysRevApplied.10.014019</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Photo-Hall-Effect Spectroscopy with Enhanced Illumination in p-Cd1-xMnxTe Showing Negative Differential Photoconductivity

Popis výsledku v původním jazyce

The charge-transport properties of semiconductor and semiinsulator materials are strongly controlled by the crystallographic defects manifesting energy states in the bandgap. In this paper, we study deep levels (DLs) in p-type Cd1-xMnxTe by photo-Hall-effect spectroscopy with enhanced illumination. We show that the mobility of minority (925 +/- 11 cm(2) s(-1) V-1) and majority (59.6 +/- 0.4 cm(2) s(-1) V-1) carriers can be deduced directly from the spectra by using proper wavelength and excitation intensity. Four deep levels with ionization energies E-t1 = E-V + 0.63 eV, E-t2 = E-V + 0.9 eV, E-t3 = E-C-1.0 eV, and E-t4 = E-C-1.3 eV are detected and their positions in the bandgap are verified by comparison of photogenerated electron and hole concentrations. The deduced DL model is analyzed by numerical simulations with Shockley-Reed-Hall charge generation-recombination theory and compared with alternative DL models differing in the position of selected DLs relative to E-C and E-V. We show that the consistent explanation of collected experimental data principally limits the applicability of alternative DL models. We also demonstrate the importance of the extended operation photon fluxes (I &gt; 4x10(14) cm(-2) s(-1)) used in the spectra acquisition for correct determination of DL character. Negative differential photoconductivity is observed and studied by charge dynamic theoretical simulations.

Název v anglickém jazyce

Photo-Hall-Effect Spectroscopy with Enhanced Illumination in p-Cd1-xMnxTe Showing Negative Differential Photoconductivity

Popis výsledku anglicky

The charge-transport properties of semiconductor and semiinsulator materials are strongly controlled by the crystallographic defects manifesting energy states in the bandgap. In this paper, we study deep levels (DLs) in p-type Cd1-xMnxTe by photo-Hall-effect spectroscopy with enhanced illumination. We show that the mobility of minority (925 +/- 11 cm(2) s(-1) V-1) and majority (59.6 +/- 0.4 cm(2) s(-1) V-1) carriers can be deduced directly from the spectra by using proper wavelength and excitation intensity. Four deep levels with ionization energies E-t1 = E-V + 0.63 eV, E-t2 = E-V + 0.9 eV, E-t3 = E-C-1.0 eV, and E-t4 = E-C-1.3 eV are detected and their positions in the bandgap are verified by comparison of photogenerated electron and hole concentrations. The deduced DL model is analyzed by numerical simulations with Shockley-Reed-Hall charge generation-recombination theory and compared with alternative DL models differing in the position of selected DLs relative to E-C and E-V. We show that the consistent explanation of collected experimental data principally limits the applicability of alternative DL models. We also demonstrate the importance of the extended operation photon fluxes (I &gt; 4x10(14) cm(-2) s(-1)) used in the spectra acquisition for correct determination of DL character. Negative differential photoconductivity is observed and studied by charge dynamic theoretical simulations.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GA16-23165S" target="_blank" >GA16-23165S: Příprava elektrických kontaktů na detektorech záření CdTe a CdZnTe</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physical Review Applied

ISSN

2331-7019

e-ISSN

—

Svazek periodika

10

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

13

Strana od-do

—

Kód UT WoS článku

000439310400001

EID výsledku v databázi Scopus

2-s2.0-85050385604