Analysis of trapping and de-trapping in CdZnTe detectors by Pockels effect

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F16%3A10328931" target="_blank" >RIV/00216208:11320/16:10328931 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1088/0022-3727/49/37/375101" target="_blank" >http://dx.doi.org/10.1088/0022-3727/49/37/375101</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/0022-3727/49/37/375101" target="_blank" >10.1088/0022-3727/49/37/375101</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Analysis of trapping and de-trapping in CdZnTe detectors by Pockels effect

Popis výsledku v původním jazyce

In this contribution we introduce a method of deep level spectroscopy in semi-insulating semiconductors demonstrated on detector-grade bulk CdZnTe. The method is based on the measurements of temporal and temperature evolution of the electric field profile in studied samples, which is very sensitive to a change of occupancy of deep levels. The measurement of the electric field is based on the linear electro-optic (Pockels) effect using the InGaAs avalanche photodiode with fast response. The internal electric field profile in studied samples significantly changes under various external conditions represented by the application of the bias and pulsed illumination with below-bandgap light. From the knowledge of the electric field behavior and using a standard analysis based on thermally induced transitions of electrons and holes from the deep levels to the conduction and valence bands, respectively, it is possible to get activation energies of the energy levels, their types (donor or acceptor) and corresponding capture cross-sections. By this method we have found deep levels responsible for the polarization of CdZnTe detector under high photon-fluxes. Identified deep levels E-v + 0.41 eV, E-v + 0.77 eV and E-v + 0.94 eV can capture the photo-generated holes and thus form a positive space charge, which is responsible for polarization of the detector.

Název v anglickém jazyce

Analysis of trapping and de-trapping in CdZnTe detectors by Pockels effect

Popis výsledku anglicky

In this contribution we introduce a method of deep level spectroscopy in semi-insulating semiconductors demonstrated on detector-grade bulk CdZnTe. The method is based on the measurements of temporal and temperature evolution of the electric field profile in studied samples, which is very sensitive to a change of occupancy of deep levels. The measurement of the electric field is based on the linear electro-optic (Pockels) effect using the InGaAs avalanche photodiode with fast response. The internal electric field profile in studied samples significantly changes under various external conditions represented by the application of the bias and pulsed illumination with below-bandgap light. From the knowledge of the electric field behavior and using a standard analysis based on thermally induced transitions of electrons and holes from the deep levels to the conduction and valence bands, respectively, it is possible to get activation energies of the energy levels, their types (donor or acceptor) and corresponding capture cross-sections. By this method we have found deep levels responsible for the polarization of CdZnTe detector under high photon-fluxes. Identified deep levels E-v + 0.41 eV, E-v + 0.77 eV and E-v + 0.94 eV can capture the photo-generated holes and thus form a positive space charge, which is responsible for polarization of the detector.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Physics D - Applied Physics

ISSN

0022-3727

e-ISSN

—

Svazek periodika

49

Číslo periodika v rámci svazku

37

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

8

Strana od-do

—

Kód UT WoS článku

000384093000007

EID výsledku v databázi Scopus

2-s2.0-84989158663