Transverse magnetooptic effect in multilayers applied to mapping of microwave currents

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F17%3A10369087" target="_blank" >RIV/00216208:11320/17:10369087 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1364/OME.7.002368" target="_blank" >http://dx.doi.org/10.1364/OME.7.002368</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1364/OME.7.002368" target="_blank" >10.1364/OME.7.002368</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Transverse magnetooptic effect in multilayers applied to mapping of microwave currents

Popis výsledku v původním jazyce

A sensor capable of mapping microwave (mw) currents in semiconductor circuits can be realized by exploiting magneto-optic effects (MO) at transverse magnetization (M-perpendicular to) in ultrathin ferromagnetic or ferrimagnetic films. In the sensor, M-perpendicular to would be induced in the magnetic film by the fringing fields of mw currents flowing in the semiconductor circuit along the plane of incidence. In this work, an evaluation of MO sensor performance was made for nanostructures consisting of ultrathin Fe layers sandwiched between AlN dielectric layers. The multilayer thin film stacks were grown on Si wafer substrates. The performance of the sensor systems is characterized in terms of magnetization-induced changes in the MO multilayer reflection coefficients, expressed analytically. Sensor configurations which optimize the operation at the laser wavelength of 410 nm, and which are still easy to fabricate, are proposed. Modeling predicts the strongest MO enhancement in a sensor incorporating two Fe nanolayers, each of a different thickness, formed by the layer sequence AlN/Fe/AlN/Fe/AlN/Au/Si. The use of ferrimagnetic hexagonal ferrite films with the in-plane c-axis as an alternative sensor material is also discussed. (C) 2017 Optical Society of America

Název v anglickém jazyce

Transverse magnetooptic effect in multilayers applied to mapping of microwave currents

Popis výsledku anglicky

A sensor capable of mapping microwave (mw) currents in semiconductor circuits can be realized by exploiting magneto-optic effects (MO) at transverse magnetization (M-perpendicular to) in ultrathin ferromagnetic or ferrimagnetic films. In the sensor, M-perpendicular to would be induced in the magnetic film by the fringing fields of mw currents flowing in the semiconductor circuit along the plane of incidence. In this work, an evaluation of MO sensor performance was made for nanostructures consisting of ultrathin Fe layers sandwiched between AlN dielectric layers. The multilayer thin film stacks were grown on Si wafer substrates. The performance of the sensor systems is characterized in terms of magnetization-induced changes in the MO multilayer reflection coefficients, expressed analytically. Sensor configurations which optimize the operation at the laser wavelength of 410 nm, and which are still easy to fabricate, are proposed. Modeling predicts the strongest MO enhancement in a sensor incorporating two Fe nanolayers, each of a different thickness, formed by the layer sequence AlN/Fe/AlN/Fe/AlN/Au/Si. The use of ferrimagnetic hexagonal ferrite films with the in-plane c-axis as an alternative sensor material is also discussed. (C) 2017 Optical Society of America

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/GA15-21547S" target="_blank" >GA15-21547S: Charakterizace magnetických nanostruktur optickými metodami</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Optical Materials Express

ISSN

2159-3930

e-ISSN

—

Svazek periodika

7

Číslo periodika v rámci svazku

7

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

19

Strana od-do

2368-2386

Kód UT WoS článku

000404735600024

EID výsledku v databázi Scopus

2-s2.0-85021075504