Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffraction

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F17%3A10369515" target="_blank" >RIV/00216208:11320/17:10369515 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1107/S1600577517009584" target="_blank" >http://dx.doi.org/10.1107/S1600577517009584</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1107/S1600577517009584" target="_blank" >10.1107/S1600577517009584</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffraction

Popis výsledku v původním jazyce

Coherent X-ray diffraction was used to measure the type, quantity and the relative distances between stacking faults along the growth direction of two individual wurtzite GaAs nanowires grown by metalorganic vapour epitaxy. The presented approach is based on the general property of the Patterson function, which is the autocorrelation of the electron density as well as the Fourier transformation of the diffracted intensity distribution of an object. Partial Patterson functions were extracted from the diffracted intensity measured along the [000 (1) over bar] direction in the vicinity of the wurtzite [00 (1) over bar(5) over bar] Bragg peak. The maxima of the Patterson function encode both the distances between the fault planes and the type of the fault planes with the sensitivity of a single atomic bilayer. The positions of the fault planes are deduced from the positions and shapes of the maxima of the Patterson function and they are in excellent agreement with the positions found with transmission electron microscopy of the same nanowire.

Název v anglickém jazyce

Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffraction

Popis výsledku anglicky

Coherent X-ray diffraction was used to measure the type, quantity and the relative distances between stacking faults along the growth direction of two individual wurtzite GaAs nanowires grown by metalorganic vapour epitaxy. The presented approach is based on the general property of the Patterson function, which is the autocorrelation of the electron density as well as the Fourier transformation of the diffracted intensity distribution of an object. Partial Patterson functions were extracted from the diffracted intensity measured along the [000 (1) over bar] direction in the vicinity of the wurtzite [00 (1) over bar(5) over bar] Bragg peak. The maxima of the Patterson function encode both the distances between the fault planes and the type of the fault planes with the sensitivity of a single atomic bilayer. The positions of the fault planes are deduced from the positions and shapes of the maxima of the Patterson function and they are in excellent agreement with the positions found with transmission electron microscopy of the same nanowire.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/EF15_003%2F0000485" target="_blank" >EF15_003/0000485: Centrum nanomateriálů pro pokročilé aplikace</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Synchrotron Radiation [online]

ISSN

1600-5775

e-ISSN

—

Svazek periodika

24

Číslo periodika v rámci svazku

září

Stát vydavatele periodika

JP - Japonsko

Počet stran výsledku

10

Strana od-do

981-990

Kód UT WoS článku

000408902800011

EID výsledku v databázi Scopus

2-s2.0-85028705240