Three-dimensional reciprocal space mapping of diffuse scattering for the study of stacking faults in semipolar (11(2)over-bar2) GaN layers grown from the sidewall of an r-patterned sapphire substrate

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F13%3A10140011" target="_blank" >RIV/00216208:11320/13:10140011 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1107/S0021889813020438" target="_blank" >http://dx.doi.org/10.1107/S0021889813020438</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1107/S0021889813020438" target="_blank" >10.1107/S0021889813020438</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Three-dimensional reciprocal space mapping of diffuse scattering for the study of stacking faults in semipolar (11(2)over-bar2) GaN layers grown from the sidewall of an r-patterned sapphire substrate

Popis výsledku v původním jazyce

Three-dimensional reciprocal space mapping of semipolar (11 (2) over bar2) GaN grown on stripe-patterned r-plane (1 (1) over bar 02) sapphire substrates is found to be a powerful and crucial method for the analysis of diffuse scattering originating fromstacking faults that are diffracting in a noncoplanar geometry. Additionally, by measuring three-dimensional reciprocal space maps (3D-RSMs) of several reflections, the transmission electron microscopy visibility criteria could be confirmed. Furthermore,similar to cathodoluminescence, the 3D-RSM method could be used in future as a reliable tool to distinguish clearly between the diffuse scattering signals coming from prismatic and from basal plane stacking faults and from partial dislocations in semipolar (11 (2) over bar2) GaN. The fitting of the diffuse scattering intensity profile along the stacking fault streaks with a simulation based on the Monte Carlo approach has delivered an accurate determination of the basal plane stacking f

Název v anglickém jazyce

Three-dimensional reciprocal space mapping of diffuse scattering for the study of stacking faults in semipolar (11(2)over-bar2) GaN layers grown from the sidewall of an r-patterned sapphire substrate

Popis výsledku anglicky

Three-dimensional reciprocal space mapping of semipolar (11 (2) over bar2) GaN grown on stripe-patterned r-plane (1 (1) over bar 02) sapphire substrates is found to be a powerful and crucial method for the analysis of diffuse scattering originating fromstacking faults that are diffracting in a noncoplanar geometry. Additionally, by measuring three-dimensional reciprocal space maps (3D-RSMs) of several reflections, the transmission electron microscopy visibility criteria could be confirmed. Furthermore,similar to cathodoluminescence, the 3D-RSM method could be used in future as a reliable tool to distinguish clearly between the diffuse scattering signals coming from prismatic and from basal plane stacking faults and from partial dislocations in semipolar (11 (2) over bar2) GaN. The fitting of the diffuse scattering intensity profile along the stacking fault streaks with a simulation based on the Monte Carlo approach has delivered an accurate determination of the basal plane stacking f

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Applied Crystallography

ISSN

0021-8898

e-ISSN

—

Svazek periodika

46

Číslo periodika v rámci svazku

July

Stát vydavatele periodika

DK - Dánské království

Počet stran výsledku

9

Strana od-do

1425-1433

Kód UT WoS článku

000324764500022

EID výsledku v databázi Scopus

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