Three-dimensional reciprocal space mapping with a two-dimensional detector as a low-latency tool for investigating the influence of growth parameters on defects in semipolar GaN

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F15%3A10296715" target="_blank" >RIV/00216208:11320/15:10296715 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1107/S1600576715009085" target="_blank" >http://dx.doi.org/10.1107/S1600576715009085</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1107/S1600576715009085" target="_blank" >10.1107/S1600576715009085</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Three-dimensional reciprocal space mapping with a two-dimensional detector as a low-latency tool for investigating the influence of growth parameters on defects in semipolar GaN

Popis výsledku v původním jazyce

A rapid nondestructive defect assessment and quantification method based on X-ray diffraction and three-dimensional reciprocal-space mapping has been established. A fast read-out two-dimensional detector with a high dynamic range of 20 bits, in combination with a powerful data analysis software package, is set up to provide fast feedback to crystal growers with the goal of supporting the development of reduced defect density GaN growth techniques. This would contribute strongly to the improvement of thecrystal quality of epitaxial structures and therefore of optoelectronic properties. The method of normalized three-dimensional reciprocal-space mapping is found to be a reliable tool which shows clearly the influence of the parameters of the metal-organic vapour phase epitaxial and hydride vapour phase epitaxial (HVPE) growth methods on the extent of the diffuse scattering streak. This method enables determination of the basal stacking faults and an exploration of the presence of other

Název v anglickém jazyce

Three-dimensional reciprocal space mapping with a two-dimensional detector as a low-latency tool for investigating the influence of growth parameters on defects in semipolar GaN

Popis výsledku anglicky

A rapid nondestructive defect assessment and quantification method based on X-ray diffraction and three-dimensional reciprocal-space mapping has been established. A fast read-out two-dimensional detector with a high dynamic range of 20 bits, in combination with a powerful data analysis software package, is set up to provide fast feedback to crystal growers with the goal of supporting the development of reduced defect density GaN growth techniques. This would contribute strongly to the improvement of thecrystal quality of epitaxial structures and therefore of optoelectronic properties. The method of normalized three-dimensional reciprocal-space mapping is found to be a reliable tool which shows clearly the influence of the parameters of the metal-organic vapour phase epitaxial and hydride vapour phase epitaxial (HVPE) growth methods on the extent of the diffuse scattering streak. This method enables determination of the basal stacking faults and an exploration of the presence of other

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Applied Crystallography

ISSN

0021-8898

e-ISSN

—

Svazek periodika

48

Číslo periodika v rámci svazku

August

Stát vydavatele periodika

DK - Dánské království

Počet stran výsledku

11

Strana od-do

1000-1010

Kód UT WoS článku

000358791900003

EID výsledku v databázi Scopus

2-s2.0-84938403673