Rtg difúzní rozptyl od vrstevných chyb v CZ Si

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F06%3A00016658" target="_blank" >RIV/00216224:14310/06:00016658 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

X-ray diffuse scattering from stacking faults in Czochralski silicon

Popis výsledku v původním jazyce

High resolution x-ray diffraction has been used to measure the reciprocal space maps of intensity distribution from the scattering on defects in silicon wafers after annealing processes. The displacement field around stacking faults and dislocation loopshas been calculated using the Burgers theory of elasticity. From these calculations a reciprocal space map of x-ray diffuse scattered intensity has been simulated. The type and size of the defects can be determined from a comparison of measured with simulated maps. The type of defects has been determined from the symmetry of measured reciprocal space maps, where higher intensity streaks corresponding to planar defects in {1 1 1} planes have been observed. Using the width of these higher intensity streaks and comparing measured and simulated maps, the radius of stacking faults with the Burgers vector a/3[1 1 1] in {1 1 1} planes was found to be 0.3-0.5 micrometers.

Název v anglickém jazyce

X-ray diffuse scattering from stacking faults in Czochralski silicon

Popis výsledku anglicky

High resolution x-ray diffraction has been used to measure the reciprocal space maps of intensity distribution from the scattering on defects in silicon wafers after annealing processes. The displacement field around stacking faults and dislocation loopshas been calculated using the Burgers theory of elasticity. From these calculations a reciprocal space map of x-ray diffuse scattered intensity has been simulated. The type and size of the defects can be determined from a comparison of measured with simulated maps. The type of defects has been determined from the symmetry of measured reciprocal space maps, where higher intensity streaks corresponding to planar defects in {1 1 1} planes have been observed. Using the width of these higher intensity streaks and comparing measured and simulated maps, the radius of stacking faults with the Burgers vector a/3[1 1 1] in {1 1 1} planes was found to be 0.3-0.5 micrometers.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2006

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Semicond. Sci. Technol.

ISSN

0268-1242

e-ISSN

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Svazek periodika

21

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

6

Strana od-do

352-357

Kód UT WoS článku

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EID výsledku v databázi Scopus

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