Transient phenomena at Schottky Au-CdZnTe interface

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F18%3A10384696" target="_blank" >RIV/00216208:11320/18:10384696 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68081723:_____/18:00495586

Výsledek na webu

<a href="https://doi.org/10.1088/1748-0221/13/10/C10001" target="_blank" >https://doi.org/10.1088/1748-0221/13/10/C10001</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1748-0221/13/10/C10001" target="_blank" >10.1088/1748-0221/13/10/C10001</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Transient phenomena at Schottky Au-CdZnTe interface

Popis výsledku v původním jazyce

In this contribution, we present a study of the current transients and polarization phenomena in n-type CdZnTe material with Au contacts with upwards bending of the bands near the metal-semiconductor (M-S) interface. The transient of the electric field along the sample due to the accumulation of positive space charge below the cathode at the M-S interface was studied by means of the Pockels effect. The analysis of the time and temperature variation of the electric field values at the M-S interface has provided the parameters of the deep donor responsible for the polarization mechanisms in the n-type CdZnTe. We explain the change of the current with time as a result of changing electric field at the interface. The field dependence of barrier height due to the formation of interfacial layer at the M-S interface is the mechanism responsible for the current transient. Model to explain the transient phenomena in the studied structure has been proposed based on our findings.

Název v anglickém jazyce

Transient phenomena at Schottky Au-CdZnTe interface

Popis výsledku anglicky

In this contribution, we present a study of the current transients and polarization phenomena in n-type CdZnTe material with Au contacts with upwards bending of the bands near the metal-semiconductor (M-S) interface. The transient of the electric field along the sample due to the accumulation of positive space charge below the cathode at the M-S interface was studied by means of the Pockels effect. The analysis of the time and temperature variation of the electric field values at the M-S interface has provided the parameters of the deep donor responsible for the polarization mechanisms in the n-type CdZnTe. We explain the change of the current with time as a result of changing electric field at the interface. The field dependence of barrier height due to the formation of interfacial layer at the M-S interface is the mechanism responsible for the current transient. Model to explain the transient phenomena in the studied structure has been proposed based on our findings.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Instrumentation

ISSN

1748-0221

e-ISSN

—

Svazek periodika

13

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

11

Strana od-do

—

Kód UT WoS článku

000447061000001

EID výsledku v databázi Scopus

2-s2.0-85056136657