The influence of Si in Ni on the interface modification and the band alignment between Ni and alumina

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F18%3A10389413" target="_blank" >RIV/00216208:11320/18:10389413 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.apsusc.2018.02.091" target="_blank" >https://doi.org/10.1016/j.apsusc.2018.02.091</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2018.02.091" target="_blank" >10.1016/j.apsusc.2018.02.091</a>

Jazyk výsledku

angličtina

Název v původním jazyce

The influence of Si in Ni on the interface modification and the band alignment between Ni and alumina

Popis výsledku v původním jazyce

The influence of a small amount of Si in a Ni single crystal on the interface formation between aluminum oxide and Ni has been investigated. The interface was formed by in-situ growth of the oxide by simultaneous supply of Al and oxygen onto Ni(1 1 1) in an ultrahigh vacuum chamber equipped with XPS apparatus. The oxide growth and the interface formation were compared between Si-containing Ni(1 1 1) and pure Ni(1 1 1). It was revealed that Si segregated on the surface of Ni and oxidized, forming an epitaxial thin alumino-silicate film. Valence band spectra demonstrated that the band offset between the oxide and Ni (energy level difference between the valence band top and the Fermi level) is different due to the oxidized Si segregation at the interface.

Název v anglickém jazyce

The influence of Si in Ni on the interface modification and the band alignment between Ni and alumina

Popis výsledku anglicky

The influence of a small amount of Si in a Ni single crystal on the interface formation between aluminum oxide and Ni has been investigated. The interface was formed by in-situ growth of the oxide by simultaneous supply of Al and oxygen onto Ni(1 1 1) in an ultrahigh vacuum chamber equipped with XPS apparatus. The oxide growth and the interface formation were compared between Si-containing Ni(1 1 1) and pure Ni(1 1 1). It was revealed that Si segregated on the surface of Ni and oxidized, forming an epitaxial thin alumino-silicate film. Valence band spectra demonstrated that the band offset between the oxide and Ni (energy level difference between the valence band top and the Fermi level) is different due to the oxidized Si segregation at the interface.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10305 - Fluids and plasma physics (including surface physics)

Projekt

<a href="/cs/project/LM2015057" target="_blank" >LM2015057: Laboratoř fyziky povrchů – Optická dráha pro výzkum materiálů</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Surface Science

ISSN

0169-4332

e-ISSN

—

Svazek periodika

442

Číslo periodika v rámci svazku

Jun

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

6

Strana od-do

164-169

Kód UT WoS článku

000428294500020

EID výsledku v databázi Scopus

2-s2.0-85042308968