Hydrogen gas sensing properties of WO3 sputter-deposited thin films enhanced by on-top deposited CuO nanoclusters
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F18%3A10391193" target="_blank" >RIV/00216208:11320/18:10391193 - isvavai.cz</a>
Nalezeny alternativní kódy
RIV/49777513:23520/18:43953433
Výsledek na webu
<a href="https://doi.org/10.1016/j.ijhydene.2018.10.127" target="_blank" >https://doi.org/10.1016/j.ijhydene.2018.10.127</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.ijhydene.2018.10.127" target="_blank" >10.1016/j.ijhydene.2018.10.127</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Hydrogen gas sensing properties of WO3 sputter-deposited thin films enhanced by on-top deposited CuO nanoclusters
Popis výsledku v původním jazyce
Magnetron-based gas aggregation cluster source (GAS) was used to prepare high-purity CuO (cupric oxide) nanoclusters on top of sputter-deposited thin film of tungsten trioxide (WO3). The material was assembled as a conductometric hydrogen gas sensor and its response was tested and evaluated. It is demonstrated that addition of CuO clusters noticeably enhances the sensitivity of the pure WO3 thin film. With an increasing amount of CuO clusters the sensitivity of CuO/WO3 system rises further. When CuO clusters form a sufficiently thick and compact layer, the resistance response is reversed. Based on the sensorial behavior, conventional and near-ambient pressure X-Ray photoemission spectroscopies, and resistivity measurements, we propose that the sensing mechanism is based on the formation of nano-sized p-n junctions in between p-type CuO and n-type WO3. The advantages of the GAS technique for preparing sensorial and/or catalytically active materials are emphasized. (C) 2018 Hydrogen Energy Publications LLC. Published by Elsevier Ltd. All rights reserved.
Název v anglickém jazyce
Hydrogen gas sensing properties of WO3 sputter-deposited thin films enhanced by on-top deposited CuO nanoclusters
Popis výsledku anglicky
Magnetron-based gas aggregation cluster source (GAS) was used to prepare high-purity CuO (cupric oxide) nanoclusters on top of sputter-deposited thin film of tungsten trioxide (WO3). The material was assembled as a conductometric hydrogen gas sensor and its response was tested and evaluated. It is demonstrated that addition of CuO clusters noticeably enhances the sensitivity of the pure WO3 thin film. With an increasing amount of CuO clusters the sensitivity of CuO/WO3 system rises further. When CuO clusters form a sufficiently thick and compact layer, the resistance response is reversed. Based on the sensorial behavior, conventional and near-ambient pressure X-Ray photoemission spectroscopies, and resistivity measurements, we propose that the sensing mechanism is based on the formation of nano-sized p-n junctions in between p-type CuO and n-type WO3. The advantages of the GAS technique for preparing sensorial and/or catalytically active materials are emphasized. (C) 2018 Hydrogen Energy Publications LLC. Published by Elsevier Ltd. All rights reserved.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
10305 - Fluids and plasma physics (including surface physics)
Návaznosti výsledku
Projekt
Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach
Ostatní
Rok uplatnění
2018
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
International Journal of Hydrogen Energy
ISSN
0360-3199
e-ISSN
—
Svazek periodika
43
Číslo periodika v rámci svazku
50
Stát vydavatele periodika
GB - Spojené království Velké Británie a Severního Irska
Počet stran výsledku
9
Strana od-do
22756-22764
Kód UT WoS článku
000452817200023
EID výsledku v databázi Scopus
2-s2.0-85056321997