Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F19%3A10398929" target="_blank" >RIV/00216208:11320/19:10398929 - isvavai.cz</a>

Výsledek na webu

<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=ylLk1npiuh" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=ylLk1npiuh</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.3390/ma12162583" target="_blank" >10.3390/ma12162583</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes

Popis výsledku v původním jazyce

InGaN quantum wells were grown using metalorganic chemical vapor phase epitaxy (vertical and horizontal types of reactors) on stripes made on GaN substrate. The stripe width was 5, 10, 20, 50, and 100 mu m and their height was 4 and 1 mu m. InGaN wells grown on stripes made in the direction perpendicular to the off-cut had a rough morphology and, therefore, this azimuth of stripes was not further explored. InGaN wells grown on the stripes made in the direction parallel to the GaN substrate off-cut had a step-flow-like morphology. For these samples (grown at low temperatures), we found out that the InGaN growth rate was higher for the narrower stripes. The higher growth rate induces a higher indium incorporation and a longer wavelength emission in photoluminescence measurements. This phenomenon is very clear for the 4 mu m high stripes and less pronounced for the shallower 1 mu m high stripes. The dependence of the emission wavelength on the stripe width paves a way to multicolor emitters.

Název v anglickém jazyce

Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes

Popis výsledku anglicky

InGaN quantum wells were grown using metalorganic chemical vapor phase epitaxy (vertical and horizontal types of reactors) on stripes made on GaN substrate. The stripe width was 5, 10, 20, 50, and 100 mu m and their height was 4 and 1 mu m. InGaN wells grown on stripes made in the direction perpendicular to the off-cut had a rough morphology and, therefore, this azimuth of stripes was not further explored. InGaN wells grown on the stripes made in the direction parallel to the GaN substrate off-cut had a step-flow-like morphology. For these samples (grown at low temperatures), we found out that the InGaN growth rate was higher for the narrower stripes. The higher growth rate induces a higher indium incorporation and a longer wavelength emission in photoluminescence measurements. This phenomenon is very clear for the 4 mu m high stripes and less pronounced for the shallower 1 mu m high stripes. The dependence of the emission wavelength on the stripe width paves a way to multicolor emitters.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/EF15_003%2F0000485" target="_blank" >EF15_003/0000485: Centrum nanomateriálů pro pokročilé aplikace</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Materials

ISSN

1996-1944

e-ISSN

—

Svazek periodika

12

Číslo periodika v rámci svazku

16

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

15

Strana od-do

2583

Kód UT WoS článku

000484464800084

EID výsledku v databázi Scopus

2-s2.0-85070543742