Electronic properties of GaAsBi(001) alloys at low Bi content

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F19%3A10425676" target="_blank" >RIV/00216208:11320/19:10425676 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/19:00509391

Výsledek na webu

<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=u1gRSebKM1" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=u1gRSebKM1</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1103/PhysRevMaterials.3.044601" target="_blank" >10.1103/PhysRevMaterials.3.044601</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Electronic properties of GaAsBi(001) alloys at low Bi content

Popis výsledku v původním jazyce

We present an in-depth investigation of structural and electronic properties of GaAsBi epilayers. High (001) crystalline order is achieved using careful molecular beam epitaxy and surface preparation procedures. High surface order allows us to use x-ray, ultraviolet, and angle-resolved photoemission spectroscopy at variable photon energies and to disentangle electronic effects of an atomically thin Bi-rich surface layer with (2 x 3) symmetry from those of Bi atoms incorporated in the GaAs bulk matrix. The influence of bulk-integrated Bi concentrations on the GaAs band structure becomes visible in angle-resolved photoemission after removing Bi-rich surface layers by a brief and mild ion bombardment and subsequent annealing treatment. Experimental observations are supported by density functional theory simulations of the valence band structure of bulk and surface-reconstructed GaAs with and without Bi. Bi-induced energy shifts in the dispersion of GaAs heavy and light hole bulk bands are evident both in experiment and theory, which are relevant for modulations in the optical band gap and thus optoelectronic applications.

Název v anglickém jazyce

Electronic properties of GaAsBi(001) alloys at low Bi content

Popis výsledku anglicky

We present an in-depth investigation of structural and electronic properties of GaAsBi epilayers. High (001) crystalline order is achieved using careful molecular beam epitaxy and surface preparation procedures. High surface order allows us to use x-ray, ultraviolet, and angle-resolved photoemission spectroscopy at variable photon energies and to disentangle electronic effects of an atomically thin Bi-rich surface layer with (2 x 3) symmetry from those of Bi atoms incorporated in the GaAs bulk matrix. The influence of bulk-integrated Bi concentrations on the GaAs band structure becomes visible in angle-resolved photoemission after removing Bi-rich surface layers by a brief and mild ion bombardment and subsequent annealing treatment. Experimental observations are supported by density functional theory simulations of the valence band structure of bulk and surface-reconstructed GaAs with and without Bi. Bi-induced energy shifts in the dispersion of GaAs heavy and light hole bulk bands are evident both in experiment and theory, which are relevant for modulations in the optical band gap and thus optoelectronic applications.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10305 - Fluids and plasma physics (including surface physics)

Projekt

—

Návaznosti

—

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physical Review Materials

ISSN

2475-9953

e-ISSN

—

Svazek periodika

3

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

14

Strana od-do

044601

Kód UT WoS článku

000463911400001

EID výsledku v databázi Scopus

2-s2.0-85064162860