Anomalous current-voltage and impedance behaviour in doped Poly 3-methylthiophene devices

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F20%3A10412332" target="_blank" >RIV/00216208:11320/20:10412332 - isvavai.cz</a>

Výsledek na webu

<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=jbuiJv9NQF" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=jbuiJv9NQF</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1361-6463/ab7d67" target="_blank" >10.1088/1361-6463/ab7d67</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Anomalous current-voltage and impedance behaviour in doped Poly 3-methylthiophene devices

Popis výsledku v původním jazyce

Current-voltage (I-V) and impedance measurements are performed on electrochemically-doped poly(3-methylthiophene) (P3MeT) devices in metal/polymer/metal sandwich geometry. The detailed investigation shows the presence of negative differential resistance (NDR) in the sandwich devices with different metals in action as substrate and top electrode. It is found that the reiteration of I-V measurements significantly enhances the NDR. The P3MeT devices shows a considerable switching behaviour with ON to OFF ratio varying between two to three order but lacks the consistency in bias stress test. An anomalous behaviour in the impedance measurements in the form of a prolonged tail is observed in Cole-Cole plots towards lower frequency region, which gets more prominent with applied bias. This impedance anomaly is explained in terms of large distribution of relaxation times arising due to long lived trap states at the bulk and interface which is correlated with the NDR observed in P3MeT devices.

Název v anglickém jazyce

Anomalous current-voltage and impedance behaviour in doped Poly 3-methylthiophene devices

Popis výsledku anglicky

Current-voltage (I-V) and impedance measurements are performed on electrochemically-doped poly(3-methylthiophene) (P3MeT) devices in metal/polymer/metal sandwich geometry. The detailed investigation shows the presence of negative differential resistance (NDR) in the sandwich devices with different metals in action as substrate and top electrode. It is found that the reiteration of I-V measurements significantly enhances the NDR. The P3MeT devices shows a considerable switching behaviour with ON to OFF ratio varying between two to three order but lacks the consistency in bias stress test. An anomalous behaviour in the impedance measurements in the form of a prolonged tail is observed in Cole-Cole plots towards lower frequency region, which gets more prominent with applied bias. This impedance anomaly is explained in terms of large distribution of relaxation times arising due to long lived trap states at the bulk and interface which is correlated with the NDR observed in P3MeT devices.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10402 - Inorganic and nuclear chemistry

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Physics D - Applied Physics

ISSN

0022-3727

e-ISSN

—

Svazek periodika

53

Číslo periodika v rámci svazku

29

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

7

Strana od-do

295301

Kód UT WoS článku

000536758400001

EID výsledku v databázi Scopus

2-s2.0-85085679746