Local geometry around B atoms in B/Si(111) from polarized x-ray absorption spectroscopy

Kód výsledku v IS VaVaI

RIV/00216208:11320/20:10425669 - isvavai.cz

Nalezeny alternativní kódy

RIV/68378271:_____/20:00533154 RIV/49777513:23640/20:43958550

Výsledek na webu

https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=oh04A.K1WR

DOI - Digital Object Identifier

10.1088/1361-648X/ab4aba

Jazyk výsledku

angličtina

Název v původním jazyce

Local geometry around B atoms in B/Si(111) from polarized x-ray absorption spectroscopy

Popis výsledku v původním jazyce

The arrangement of B atoms in a doped Si(111)-(root 3x root 3)R30 degrees:B system was studied using a near-edge x-ray absorption fine structure (NEXAFS). Boron atoms were deposited via segregation from the bulk by flashing the sample repeatedly. The positions of B atoms are determined by comparing measured polarized (angle-dependent) NEXAFS spectra with spectra calculated for various structural models based on ab initio total energy calculations. It is found that most of boron atoms are located in sub-surface L positions, beneath a Si atom. However, depending on the preparation method a significant portion of B atoms may be located elsewhere. A possible location of these non-L-atoms is at the surface, next to those Si atoms which form the (root 3x root 3)R30 degrees reconstruction.

Název v anglickém jazyce

Local geometry around B atoms in B/Si(111) from polarized x-ray absorption spectroscopy

Popis výsledku anglicky

The arrangement of B atoms in a doped Si(111)-(root 3x root 3)R30 degrees:B system was studied using a near-edge x-ray absorption fine structure (NEXAFS). Boron atoms were deposited via segregation from the bulk by flashing the sample repeatedly. The positions of B atoms are determined by comparing measured polarized (angle-dependent) NEXAFS spectra with spectra calculated for various structural models based on ab initio total energy calculations. It is found that most of boron atoms are located in sub-surface L positions, beneath a Si atom. However, depending on the preparation method a significant portion of B atoms may be located elsewhere. A possible location of these non-L-atoms is at the surface, next to those Si atoms which form the (root 3x root 3)R30 degrees reconstruction.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10305 - Fluids and plasma physics (including surface physics)

Projekt

—

Návaznosti

—

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Physics Condensed Matter

ISSN

0953-8984

e-ISSN

—

Svazek periodika

32

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

7

Strana od-do

045901

Kód UT WoS článku

000492984500006

EID výsledku v databázi Scopus

2-s2.0-85075814264