Local geometry around B atoms in B/Si(1 1 1) from polarized x-ray absorption spectroscopy

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00533154" target="_blank" >RIV/68378271:_____/20:00533154 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/49777513:23640/20:43958550 RIV/00216208:11320/20:10425669

Výsledek na webu

<a href="https://doi.org/10.1088/1361-648X/ab4aba" target="_blank" >https://doi.org/10.1088/1361-648X/ab4aba</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1361-648X/ab4aba" target="_blank" >10.1088/1361-648X/ab4aba</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Local geometry around B atoms in B/Si(1 1 1) from polarized x-ray absorption spectroscopy

Popis výsledku v původním jazyce

The arrangement of B atoms in a doped Si(1 1 1)-(3 × 3)R30:B system was studied using a near-edge x-ray absorption fine structure (NEXAFS). Boron atoms were deposited via segregation from the bulk by flashing the sample repeatedly. The positions of B atoms are determined by comparing measured polarized (angle-dependent) NEXAFS spectra with spectra calculated for various structural models based on ab initio total energy calculations. It is found that most of boron atoms are located in sub-surface Lc 1 positions, beneath a Si atom. However, depending on the preparation method a significant portion of B atoms may be located elsewhere. A possible location of these non-Lc 1-atoms is at the surface, next to those Si atoms which form the (3 × 3)R30 reconstruction.

Název v anglickém jazyce

Local geometry around B atoms in B/Si(1 1 1) from polarized x-ray absorption spectroscopy

Popis výsledku anglicky

The arrangement of B atoms in a doped Si(1 1 1)-(3 × 3)R30:B system was studied using a near-edge x-ray absorption fine structure (NEXAFS). Boron atoms were deposited via segregation from the bulk by flashing the sample repeatedly. The positions of B atoms are determined by comparing measured polarized (angle-dependent) NEXAFS spectra with spectra calculated for various structural models based on ab initio total energy calculations. It is found that most of boron atoms are located in sub-surface Lc 1 positions, beneath a Si atom. However, depending on the preparation method a significant portion of B atoms may be located elsewhere. A possible location of these non-Lc 1-atoms is at the surface, next to those Si atoms which form the (3 × 3)R30 reconstruction.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/EF15_003%2F0000358" target="_blank" >EF15_003/0000358: Výpočetní a experimentální design pokročilých materiálů s novými funkcionalitami</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Physics-Condensed Matter

ISSN

0953-8984

e-ISSN

—

Svazek periodika

32

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

7

Strana od-do

1-7

Kód UT WoS článku

000492984500006

EID výsledku v databázi Scopus

2-s2.0-85075814264