Origin of Defects and Positron Annihilation in Hybrid and All-Inorganic Perovskites

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F22%3A10437871" target="_blank" >RIV/00216208:11320/22:10437871 - isvavai.cz</a>

Výsledek na webu

<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=C533DxkSax" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=C533DxkSax</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acs.chemmater.1c03540" target="_blank" >10.1021/acs.chemmater.1c03540</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Origin of Defects and Positron Annihilation in Hybrid and All-Inorganic Perovskites

Popis výsledku v původním jazyce

Emerging metal-halide perovskites (MHPs) have shown advanced charge transport properties suitable for application in solar cells, photodetectors, and many more. While the past decade witnessed tremendous progress in MHPs, very little is known about the origin of defects and their effect on carrier lifetime. In this study, we compare hybrid and all-inorganic MHPs prepared by inverse temperature solution and high-temperature melt growth to explore the influence of material preparation on the formation of defects. The presence of a low concentration of vacancies was shown in all MHPs regardless of their synthesis method demonstrated by the interaction of positron particles with vacancies and lattices of MHPs and explained by ab initio simulation of positron annihilation. We combined the Raman, Fourier transform infrared (FTIR), and positron annihilation spectroscopy methods to establish the nature of imperfections in MHPs grown using different methods. Our Raman and FTIR results reveal that only the solution-grown crystals are prone to the incorporation of a solvent in bulk during synthesis. In vast majority of studies, the charge carrier lifetime is explored using photoluminescence (PL) spectroscopy as it is a readily available method. However, PL is very sensitive to both bulk and surface recombination phenomena. Combining current waveform time-of-flight and time-resolved photoluminescence spectroscopy methods, the bulk recombination differs by a factor of 2 from crystals grown by solution versus high-temperature melt. The results propose that solvent trapping matters, not intrinsic defects. The study also suggests potential pathways for further improvement of hybrid and all-inorganic MHPs.

Název v anglickém jazyce

Origin of Defects and Positron Annihilation in Hybrid and All-Inorganic Perovskites

Popis výsledku anglicky

Emerging metal-halide perovskites (MHPs) have shown advanced charge transport properties suitable for application in solar cells, photodetectors, and many more. While the past decade witnessed tremendous progress in MHPs, very little is known about the origin of defects and their effect on carrier lifetime. In this study, we compare hybrid and all-inorganic MHPs prepared by inverse temperature solution and high-temperature melt growth to explore the influence of material preparation on the formation of defects. The presence of a low concentration of vacancies was shown in all MHPs regardless of their synthesis method demonstrated by the interaction of positron particles with vacancies and lattices of MHPs and explained by ab initio simulation of positron annihilation. We combined the Raman, Fourier transform infrared (FTIR), and positron annihilation spectroscopy methods to establish the nature of imperfections in MHPs grown using different methods. Our Raman and FTIR results reveal that only the solution-grown crystals are prone to the incorporation of a solvent in bulk during synthesis. In vast majority of studies, the charge carrier lifetime is explored using photoluminescence (PL) spectroscopy as it is a readily available method. However, PL is very sensitive to both bulk and surface recombination phenomena. Combining current waveform time-of-flight and time-resolved photoluminescence spectroscopy methods, the bulk recombination differs by a factor of 2 from crystals grown by solution versus high-temperature melt. The results propose that solvent trapping matters, not intrinsic defects. The study also suggests potential pathways for further improvement of hybrid and all-inorganic MHPs.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

<a href="/cs/project/GA19-11920S" target="_blank" >GA19-11920S: Transport náboje v pixelových detektorech záření CdZnTe</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Chemistry of Materials

ISSN

0897-4756

e-ISSN

1520-5002

Svazek periodika

2022

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

10

Strana od-do

297-306

Kód UT WoS článku

000734489000001

EID výsledku v databázi Scopus

2-s2.0-85122008378