Temperature-dependent study of the fabricated ZnS/p-Si heterojunction

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F23%3A10468616" target="_blank" >RIV/00216208:11320/23:10468616 - isvavai.cz</a>

Výsledek na webu

<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=boZvDi0_jJ" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=boZvDi0_jJ</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.physb.2023.414831" target="_blank" >10.1016/j.physb.2023.414831</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Temperature-dependent study of the fabricated ZnS/p-Si heterojunction

Popis výsledku v původním jazyce

In the present work, ZnS thin film was deposited onto a p-type Si-substrate using the chemical bath deposition method, and subsequently Ag/n-ZnS/p-Si/Ag heterojunction device was fabricated to investigate its diode parameters in the temperature range of 0-60 degrees C. Cubic zinc blende phase of the prepared ZnS thin film was confirmed using grazing incidence X-ray diffraction (GIXRD); Scherrer analysis revealed a lower limit of crystallite size as 2.4 nm. Scanning electron microscopy (SEM) revealed the surface morphology of the prepared ZnS thin film, which exhibited good homogeneity and density. UV-Visible absorption spectroscopy revealed the good UV-region absorbance and visible-region transmittance of the deposited ZnS thin film. The corresponding energy band gap was obtained from Tauc analysis and found to be 3.88eV. Photoluminescent emission (PLE) spectroscopy showed the defect mediated radiative transitions in the deposited ZnS thin film. Current-voltage (I-V) measurements of the fabricated heterojunction device exhibited Schottky diode behaviour. Diode parameters of reverse saturation current, Schottky barrier height, ideality factor and series resistance were obtained from the I-V measurements in the temperature range of 0-60 degrees C; barrier height was obtained in the range of 0.87-0.74eV, and ideality factor was obtained close to unity for I-V measurements made at 30 degrees C and 60 degrees C.

Název v anglickém jazyce

Temperature-dependent study of the fabricated ZnS/p-Si heterojunction

Popis výsledku anglicky

In the present work, ZnS thin film was deposited onto a p-type Si-substrate using the chemical bath deposition method, and subsequently Ag/n-ZnS/p-Si/Ag heterojunction device was fabricated to investigate its diode parameters in the temperature range of 0-60 degrees C. Cubic zinc blende phase of the prepared ZnS thin film was confirmed using grazing incidence X-ray diffraction (GIXRD); Scherrer analysis revealed a lower limit of crystallite size as 2.4 nm. Scanning electron microscopy (SEM) revealed the surface morphology of the prepared ZnS thin film, which exhibited good homogeneity and density. UV-Visible absorption spectroscopy revealed the good UV-region absorbance and visible-region transmittance of the deposited ZnS thin film. The corresponding energy band gap was obtained from Tauc analysis and found to be 3.88eV. Photoluminescent emission (PLE) spectroscopy showed the defect mediated radiative transitions in the deposited ZnS thin film. Current-voltage (I-V) measurements of the fabricated heterojunction device exhibited Schottky diode behaviour. Diode parameters of reverse saturation current, Schottky barrier height, ideality factor and series resistance were obtained from the I-V measurements in the temperature range of 0-60 degrees C; barrier height was obtained in the range of 0.87-0.74eV, and ideality factor was obtained close to unity for I-V measurements made at 30 degrees C and 60 degrees C.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physica B: Condensed Matter

ISSN

0921-4526

e-ISSN

1873-2135

Svazek periodika

657

Číslo periodika v rámci svazku

květen

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

9

Strana od-do

414831

Kód UT WoS článku

001032586000001

EID výsledku v databázi Scopus

2-s2.0-85150880394