The current-voltage characteristics of the ferroelectric p-YMnO3 thin film/bulk p-Si heterojunction over a broad measurement temperature range

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F19%3APU135262" target="_blank" >RIV/00216305:26210/19:PU135262 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S0925838818348023?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0925838818348023?via%3Dihub</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jallcom.2018.12.246" target="_blank" >10.1016/j.jallcom.2018.12.246</a>

Jazyk výsledku

angličtina

Název v původním jazyce

The current-voltage characteristics of the ferroelectric p-YMnO3 thin film/bulk p-Si heterojunction over a broad measurement temperature range

Popis výsledku v původním jazyce

The reverse and forward bias I-V characteristics of the Al/p-YMO/p-Si/Al heterojunction were measured at room temperature (RT) and over temperature range, from 50 to 320 K, and the I-V curves showed Schottky diode-like characteristics. The ideality factor and barrier height values were calculated as 0.81 and 2.62 from the forward bias I-V curve at room temperature (300 K), respectively. The YMO powder was prepared via solid state reaction technique. YMO thin films were grown on front surface of p-Si substrate by radio frequency (rf) magnetron sputtering using a polycrystalline YMO single target. The YMO thin film thickness on Si substrate was measured as similar to 70 nm via Dektak XT surface profilometer. The XRD, SEM, UV-Vis and XPS measurements of the YMO thin film were also performed. The bandgap energy of YMnO3 thin films was determined as 2.10 eV by UV-vis. The temperature-dependent reverse and forward bias I-V curves were evaluated in terms of thermionic emission (TE), Schottky emission, Fowler-Nordheim (F-N) tunneling and space charge-limited current (SCLC) current theories. Furthermore, it has been seen that the forward bias conduction in the junction at each temperature obeys F-N tunneling because of the linearity in the In (I/V-2) versus V-1 curves. (C) 2018 Elsevier B.V. All rights reserved.

Název v anglickém jazyce

The current-voltage characteristics of the ferroelectric p-YMnO3 thin film/bulk p-Si heterojunction over a broad measurement temperature range

Popis výsledku anglicky

The reverse and forward bias I-V characteristics of the Al/p-YMO/p-Si/Al heterojunction were measured at room temperature (RT) and over temperature range, from 50 to 320 K, and the I-V curves showed Schottky diode-like characteristics. The ideality factor and barrier height values were calculated as 0.81 and 2.62 from the forward bias I-V curve at room temperature (300 K), respectively. The YMO powder was prepared via solid state reaction technique. YMO thin films were grown on front surface of p-Si substrate by radio frequency (rf) magnetron sputtering using a polycrystalline YMO single target. The YMO thin film thickness on Si substrate was measured as similar to 70 nm via Dektak XT surface profilometer. The XRD, SEM, UV-Vis and XPS measurements of the YMO thin film were also performed. The bandgap energy of YMnO3 thin films was determined as 2.10 eV by UV-vis. The temperature-dependent reverse and forward bias I-V curves were evaluated in terms of thermionic emission (TE), Schottky emission, Fowler-Nordheim (F-N) tunneling and space charge-limited current (SCLC) current theories. Furthermore, it has been seen that the forward bias conduction in the junction at each temperature obeys F-N tunneling because of the linearity in the In (I/V-2) versus V-1 curves. (C) 2018 Elsevier B.V. All rights reserved.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Alloys and Compounds

ISSN

0925-8388

e-ISSN

1873-4669

Svazek periodika

782

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

10

Strana od-do

566-575

Kód UT WoS článku

000458608600063

EID výsledku v databázi Scopus

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