The current and capacitance characteristics as a function of sample temperature in YMn0.90Os0.10O3/p-Si structures

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F19%3APU135341" target="_blank" >RIV/00216305:26620/19:PU135341 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S1369800119309527?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S1369800119309527?via%3Dihub</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.mssp.2019.104587" target="_blank" >10.1016/j.mssp.2019.104587</a>

Jazyk výsledku

angličtina

Název v původním jazyce

The current and capacitance characteristics as a function of sample temperature in YMn0.90Os0.10O3/p-Si structures

Popis výsledku v původním jazyce

The I-V and C-V measurements have been performed on the Al/YMn0.90Os0.10O3 (YMOO)/p-Si/Al metal/ferroelectric material/semiconductor (MFES) structure at temperatures between 180 K and 320 K. YMOO thin film has been grown onto p-Si wafer by radio frequency (rf) magnetron sputtering technique using a polycrystalline YMOO single target. The surface roughness of the obtained YMOO thin film has been studied by atomic force microscope (AFM). Furthermore, the oxidation states of individual components, Y and O, have been investigated via X-ray photoelectron spectroscopy (XPS) analyses. A barrier height (BH) value of Phi(IV) = 0.89 eV for the Al/YMOO/p-Si structure has been subtracted from the I-V curves at 300 K. The obtained value of BH value is higher than the value of the conventional Al/p-Si diode, 0.58 eV. The linear relation of ln(I-F/V-F(2)) vs V-F(-1) plot has indicated that Fowler-Nordheim tunneling current affects through the interfacial layer at each temperature. The BH from C-D(-2) versus V-D curves has been obtained as Phi(CV) = 0.38 eV at 300 K and this value is lower than the value of Phi(IV) = 0.89 eV at 300 K eV. Such behavior is unexpected because the value of Phi(CV) is higher than that of Phi(IV) at the same temperature in the heterojunctions or metal-semiconductor contacts.

Název v anglickém jazyce

The current and capacitance characteristics as a function of sample temperature in YMn0.90Os0.10O3/p-Si structures

Popis výsledku anglicky

The I-V and C-V measurements have been performed on the Al/YMn0.90Os0.10O3 (YMOO)/p-Si/Al metal/ferroelectric material/semiconductor (MFES) structure at temperatures between 180 K and 320 K. YMOO thin film has been grown onto p-Si wafer by radio frequency (rf) magnetron sputtering technique using a polycrystalline YMOO single target. The surface roughness of the obtained YMOO thin film has been studied by atomic force microscope (AFM). Furthermore, the oxidation states of individual components, Y and O, have been investigated via X-ray photoelectron spectroscopy (XPS) analyses. A barrier height (BH) value of Phi(IV) = 0.89 eV for the Al/YMOO/p-Si structure has been subtracted from the I-V curves at 300 K. The obtained value of BH value is higher than the value of the conventional Al/p-Si diode, 0.58 eV. The linear relation of ln(I-F/V-F(2)) vs V-F(-1) plot has indicated that Fowler-Nordheim tunneling current affects through the interfacial layer at each temperature. The BH from C-D(-2) versus V-D curves has been obtained as Phi(CV) = 0.38 eV at 300 K and this value is lower than the value of Phi(IV) = 0.89 eV at 300 K eV. Such behavior is unexpected because the value of Phi(CV) is higher than that of Phi(IV) at the same temperature in the heterojunctions or metal-semiconductor contacts.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

O - Projekt operacniho programu

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

ISSN

1369-8001

e-ISSN

1873-4081

Svazek periodika

102

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

7

Strana od-do

1-7

Kód UT WoS článku

000477637200010

EID výsledku v databázi Scopus

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