The temperature induced current transport characteristics in the orthoferrite YbFeO3-delta thin film/p-type Si structure
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F21%3APU142117" target="_blank" >RIV/00216305:26620/21:PU142117 - isvavai.cz</a>
Výsledek na webu
<a href="https://iopscience.iop.org/article/10.1088/1361-648X/abba69" target="_blank" >https://iopscience.iop.org/article/10.1088/1361-648X/abba69</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1361-648X/abba69" target="_blank" >10.1088/1361-648X/abba69</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
The temperature induced current transport characteristics in the orthoferrite YbFeO3-delta thin film/p-type Si structure
Popis výsledku v původním jazyce
The perovskite ytterbium ferrite is a new ferroelectric semiconductor material. We presented the temperature induced current-voltage (I-V) characteristics of the Al/YbFeO3-delta/p-Si/Al hetero-junction. The orthoferrite YbFeO3-delta thin films were deposited on a single crystal p-type Si substrate by a radio frequency magnetron sputtering system. The potential barrier height (BH) and ideality factor n of the heterojunction were obtained by thermionic emission current method based on the recommendations in the literature. The fact that the calculated slopes of I-V curves become temperature independent implying that the field emission current mechanism takes place across the device, which has been explained by the presence of the spatial inhomogeneity of BHs or potential fluctuations. Moreover, a tunneling transmission coefficient value of 26.67 was obtained for the ferroelectric YbFeO3-delta layer at the Al/p-Si interface.
Název v anglickém jazyce
The temperature induced current transport characteristics in the orthoferrite YbFeO3-delta thin film/p-type Si structure
Popis výsledku anglicky
The perovskite ytterbium ferrite is a new ferroelectric semiconductor material. We presented the temperature induced current-voltage (I-V) characteristics of the Al/YbFeO3-delta/p-Si/Al hetero-junction. The orthoferrite YbFeO3-delta thin films were deposited on a single crystal p-type Si substrate by a radio frequency magnetron sputtering system. The potential barrier height (BH) and ideality factor n of the heterojunction were obtained by thermionic emission current method based on the recommendations in the literature. The fact that the calculated slopes of I-V curves become temperature independent implying that the field emission current mechanism takes place across the device, which has been explained by the presence of the spatial inhomogeneity of BHs or potential fluctuations. Moreover, a tunneling transmission coefficient value of 26.67 was obtained for the ferroelectric YbFeO3-delta layer at the Al/p-Si interface.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Návaznosti výsledku
Projekt
—
Návaznosti
O - Projekt operacniho programu
Ostatní
Rok uplatnění
2021
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Journal of Physics Condensed Matter
ISSN
0953-8984
e-ISSN
1361-648X
Svazek periodika
33
Číslo periodika v rámci svazku
3
Stát vydavatele periodika
GB - Spojené království Velké Británie a Severního Irska
Počet stran výsledku
13
Strana od-do
„035704-1“-„035704-13“
Kód UT WoS článku
000584924200001
EID výsledku v databázi Scopus
2-s2.0-85095707614