Temperature dependent current transport mechanism in osmium-doped perovskite yttrium manganite-based heterojunctions

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F19%3APU135352" target="_blank" >RIV/00216305:26620/19:PU135352 - isvavai.cz</a>

Výsledek na webu

<a href="https://aip.scitation.org/doi/10.1063/1.5094129" target="_blank" >https://aip.scitation.org/doi/10.1063/1.5094129</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/1.5094129" target="_blank" >10.1063/1.5094129</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Temperature dependent current transport mechanism in osmium-doped perovskite yttrium manganite-based heterojunctions

Popis výsledku v původním jazyce

Among the multiferroics, yttrium manganite YMnO3 (YMO) is one of the most frequently studied magnetic ferroelectric oxides and has attracted a great deal of concern, thanks to its potential magnetoelectric features. Furthermore, it has been reported in the literature that yttrium manganite is a useful interface material in thin film devices. It has been documented that the dopant into Y and/or Mn site(s) plays significant roles on the electrical and magnetic properties of YMO. The YMn0.95Os0.05O3 (YMOO) oxide powders were prepared by the well-known solid-state reaction technique. The YMOO thin films were deposited on the p-Si (100) substrate via a radio frequency sputtering method with a thickness of approximately 62nm. The oxidation states of the constituted elements have been investigated by using the X-ray photoelectron spectroscopy method. Furthermore, the surface features of the obtained thin film have been investigated using a scanning electron microscope measurement. The I-V measurements were performed in the 50-310K range, and consequently, the Schottky diodelike reverse and forward bias I-V characteristics were observed in the Al/YMOO/p-Si heterojunction. Moreover, the ideality factor and the barrier height values were calculated as 0.77 and 2.23 at room temperature, respectively.

Název v anglickém jazyce

Temperature dependent current transport mechanism in osmium-doped perovskite yttrium manganite-based heterojunctions

Popis výsledku anglicky

Among the multiferroics, yttrium manganite YMnO3 (YMO) is one of the most frequently studied magnetic ferroelectric oxides and has attracted a great deal of concern, thanks to its potential magnetoelectric features. Furthermore, it has been reported in the literature that yttrium manganite is a useful interface material in thin film devices. It has been documented that the dopant into Y and/or Mn site(s) plays significant roles on the electrical and magnetic properties of YMO. The YMn0.95Os0.05O3 (YMOO) oxide powders were prepared by the well-known solid-state reaction technique. The YMOO thin films were deposited on the p-Si (100) substrate via a radio frequency sputtering method with a thickness of approximately 62nm. The oxidation states of the constituted elements have been investigated by using the X-ray photoelectron spectroscopy method. Furthermore, the surface features of the obtained thin film have been investigated using a scanning electron microscope measurement. The I-V measurements were performed in the 50-310K range, and consequently, the Schottky diodelike reverse and forward bias I-V characteristics were observed in the Al/YMOO/p-Si heterojunction. Moreover, the ideality factor and the barrier height values were calculated as 0.77 and 2.23 at room temperature, respectively.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

O - Projekt operacniho programu

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Applied Physics

ISSN

0021-8979

e-ISSN

1089-7550

Svazek periodika

125

Číslo periodika v rámci svazku

21

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

10

Strana od-do

„214104-1“-„214104-10“

Kód UT WoS článku

000470721900046

EID výsledku v databázi Scopus

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