Tailoring the band gap of ferroelectric YMnO3 through tuning the Os doping level

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F19%3APU135261" target="_blank" >RIV/00216305:26210/19:PU135261 - isvavai.cz</a>

Výsledek na webu

<a href="https://link.springer.com/article/10.1007/s10854-018-00619-9" target="_blank" >https://link.springer.com/article/10.1007/s10854-018-00619-9</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s10854-018-00619-9" target="_blank" >10.1007/s10854-018-00619-9</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Tailoring the band gap of ferroelectric YMnO3 through tuning the Os doping level

Popis výsledku v původním jazyce

Perovskite-oxide materials have grabbed enormous attention from various research groups all over the world due to their large application areas. The band-gap engineering of those materials are important for optoelectronic researches especially for ferroelectric (FE) solar cells that have unique features such as having higher open circuit voltages than the band gap and their spontaneous polarization which leads to photovoltaic effect. Nevertheless, the most of the perovskite FE materials have wide band gaps that hamper the absorption of large solar spectrum. In the present study, it has been demonstrated the band gap of YMnO3 (YMO), which is one of the mostly studied FE materials, can be tuned via doping osmium (Os) into manganese (Mn) site. The band gap of YMO, 2.10eV successfully is lowered to 1.61eV. Polycrystalline YMnO3 and YMn1-xOsxO3 (YMOO) (x=0.01, 0.05, 0.10) thin films were synthesized on indium tin oxide (ITO) substrates at 500 degrees C by magnetron sputtering method. Their structural, chemical and optical band-gap properties were studied and the results showed the Os doped YMO compounds could be a potential candidate for future ferroelectric solar cell studies.

Název v anglickém jazyce

Tailoring the band gap of ferroelectric YMnO3 through tuning the Os doping level

Popis výsledku anglicky

Perovskite-oxide materials have grabbed enormous attention from various research groups all over the world due to their large application areas. The band-gap engineering of those materials are important for optoelectronic researches especially for ferroelectric (FE) solar cells that have unique features such as having higher open circuit voltages than the band gap and their spontaneous polarization which leads to photovoltaic effect. Nevertheless, the most of the perovskite FE materials have wide band gaps that hamper the absorption of large solar spectrum. In the present study, it has been demonstrated the band gap of YMnO3 (YMO), which is one of the mostly studied FE materials, can be tuned via doping osmium (Os) into manganese (Mn) site. The band gap of YMO, 2.10eV successfully is lowered to 1.61eV. Polycrystalline YMnO3 and YMn1-xOsxO3 (YMOO) (x=0.01, 0.05, 0.10) thin films were synthesized on indium tin oxide (ITO) substrates at 500 degrees C by magnetron sputtering method. Their structural, chemical and optical band-gap properties were studied and the results showed the Os doped YMO compounds could be a potential candidate for future ferroelectric solar cell studies.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

ISSN

0957-4522

e-ISSN

1573-482X

Svazek periodika

30

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

9

Strana od-do

3443-3451

Kód UT WoS článku

000460643200029

EID výsledku v databázi Scopus

2-s2.0-85059527411