Pseudo-vertical Mo/Au Schottky diodes on {113} oriented boron doped homoepitaxial diamond layers

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00557316" target="_blank" >RIV/68378271:_____/22:00557316 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21230/22:00358002 RIV/68407700:21460/22:00358002

Výsledek na webu

<a href="https://doi.org/10.1016/j.diamond.2022.109088" target="_blank" >https://doi.org/10.1016/j.diamond.2022.109088</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.diamond.2022.109088" target="_blank" >10.1016/j.diamond.2022.109088</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Pseudo-vertical Mo/Au Schottky diodes on {113} oriented boron doped homoepitaxial diamond layers

Popis výsledku v původním jazyce

Pseudo-vertical diodes on 113 homoepitaxial boron-doped diamond (h-BDD) were fabricated using Mo for both Schottky and ohmic contacts. After metal deposition, diodes were stabilized by annealing for 20 min at 300°C and their I-V and C-V characteristics were measured at temperatures from 30 to 180°C. Results show that Mo forms a very good and stable Schottky contact on 113 h-BDD. At 180°C, forward current densities higher than 1kA/cm2 are achieved, while the reverse current density stays unchanged at 10−8 A/cm2. The ideality factor of the diode I-V characteristic drops to 1.23 and the barrier height of the Schottky contact increases to 1.71 eV. This effect is attributed to inhomogeneity in the Schottky barrier. These characteristics are fully comparable with those of the best Schottky diodes fabricated on 100 h-BDD. Results confirm that the use of 113 h-BDD for the fabrication of high-temperature power devices is advantageous, as it enables high quality Schottky and ohmic contacts.

Název v anglickém jazyce

Pseudo-vertical Mo/Au Schottky diodes on {113} oriented boron doped homoepitaxial diamond layers

Popis výsledku anglicky

Pseudo-vertical diodes on 113 homoepitaxial boron-doped diamond (h-BDD) were fabricated using Mo for both Schottky and ohmic contacts. After metal deposition, diodes were stabilized by annealing for 20 min at 300°C and their I-V and C-V characteristics were measured at temperatures from 30 to 180°C. Results show that Mo forms a very good and stable Schottky contact on 113 h-BDD. At 180°C, forward current densities higher than 1kA/cm2 are achieved, while the reverse current density stays unchanged at 10−8 A/cm2. The ideality factor of the diode I-V characteristic drops to 1.23 and the barrier height of the Schottky contact increases to 1.71 eV. This effect is attributed to inhomogeneity in the Schottky barrier. These characteristics are fully comparable with those of the best Schottky diodes fabricated on 100 h-BDD. Results confirm that the use of 113 h-BDD for the fabrication of high-temperature power devices is advantageous, as it enables high quality Schottky and ohmic contacts.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Diamond and Related Materials

ISSN

0925-9635

e-ISSN

1879-0062

Svazek periodika

126

Číslo periodika v rámci svazku

June

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

6

Strana od-do

109088

Kód UT WoS článku

000804938700002

EID výsledku v databázi Scopus

2-s2.0-85129939139