Pseudo-vertical Schottky diode with Ruthenium contacts on (113) boron-doped homoepitaxial diamond layers

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00578139" target="_blank" >RIV/68378271:_____/23:00578139 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21230/23:00368808

Výsledek na webu

<a href="https://doi.org/10.1002/pssa.202300508" target="_blank" >https://doi.org/10.1002/pssa.202300508</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/pssa.202300508" target="_blank" >10.1002/pssa.202300508</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Pseudo-vertical Schottky diode with Ruthenium contacts on (113) boron-doped homoepitaxial diamond layers

Popis výsledku v původním jazyce

Electrical properties of pseudo-vertical Schottky barrier diodes (pVSBDs) pre-pared on (113)–oriented boron-doped diamond (BDD) layers using ruthenium(Ru) for both the ohmic and Schottky contacts are investigated. First, Ru ohmiccontacts are evaporated on homoepitaxial BDD layers with different resistivity,and their specific contact resistance is measured using circular transfer lengthmethod structures after annealing at various temperatures up to 750 °C. Then,pVSBD structures are fabricated on the boron-doped bilayer consisting of a lower,heavily boron-doped layer ensuring an ohmic contact and an upper, lightly dopedlayer providing a rectifying Schottky contact. After necessary mesa etching, both contacts are formed by the Ru evaporation. The results show that Ru forms astable ohmic contact with very low contact resistance (10 5–10 6Ωcm2) whendeposited on BDD layers with metallic conductivity. It also provides anacceptable Schottky contact on low-doped (113) homoepitaxial BDD.

Název v anglickém jazyce

Pseudo-vertical Schottky diode with Ruthenium contacts on (113) boron-doped homoepitaxial diamond layers

Popis výsledku anglicky

Electrical properties of pseudo-vertical Schottky barrier diodes (pVSBDs) pre-pared on (113)–oriented boron-doped diamond (BDD) layers using ruthenium(Ru) for both the ohmic and Schottky contacts are investigated. First, Ru ohmiccontacts are evaporated on homoepitaxial BDD layers with different resistivity,and their specific contact resistance is measured using circular transfer lengthmethod structures after annealing at various temperatures up to 750 °C. Then,pVSBD structures are fabricated on the boron-doped bilayer consisting of a lower,heavily boron-doped layer ensuring an ohmic contact and an upper, lightly dopedlayer providing a rectifying Schottky contact. After necessary mesa etching, both contacts are formed by the Ru evaporation. The results show that Ru forms astable ohmic contact with very low contact resistance (10 5–10 6Ωcm2) whendeposited on BDD layers with metallic conductivity. It also provides anacceptable Schottky contact on low-doped (113) homoepitaxial BDD.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physica Status Solidi A

ISSN

1862-6300

e-ISSN

1862-6319

Svazek periodika

220

Číslo periodika v rámci svazku

23

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

8

Strana od-do

2300508

Kód UT WoS článku

001088238900001

EID výsledku v databázi Scopus

2-s2.0-85174888978