Vertical Schottky diode on (113) oriented homoepitaxial diamond

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F24%3A00585874" target="_blank" >RIV/68378271:_____/24:00585874 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21230/24:00375042

Výsledek na webu

<a href="https://doi.org/10.1016/j.diamond.2024.111180" target="_blank" >https://doi.org/10.1016/j.diamond.2024.111180</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.diamond.2024.111180" target="_blank" >10.1016/j.diamond.2024.111180</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Vertical Schottky diode on (113) oriented homoepitaxial diamond

Popis výsledku v původním jazyce

Vertical Schottky diodes were fabricated on (113) oriented diamond substrates produced from thick heavily boron doped (NA ∼ 3.5 × 1020 cm−3) diamond layers grown on HPHT-grown synthetic Ib diamond crystals. The p+-substrates were overgrown by a low doped p-epilayer whose surface layer was compensated up to the depth of 0.1 to 0.3 μm. The surface was then oxygen terminated and covered by evaporated Mo/Au Schottky contacts. The bottom ohmic contact to p+-substrate was formed by Ti/Au bi-layer. Current- and capacitance-voltage characteristics of the realized diodes were measured at temperatures ranging from 25 to 180 °C. At room temperature, the realized diodes show high forward current densities JF = 100 A/cm2 and low differential ON-state specific resistance Ron_sp = 3.7 mΩ.cm2 at forward voltage VF = 4 V and a very low leakage (JR < 10−9 A/cm2) in the blocking regime.

Název v anglickém jazyce

Vertical Schottky diode on (113) oriented homoepitaxial diamond

Popis výsledku anglicky

Vertical Schottky diodes were fabricated on (113) oriented diamond substrates produced from thick heavily boron doped (NA ∼ 3.5 × 1020 cm−3) diamond layers grown on HPHT-grown synthetic Ib diamond crystals. The p+-substrates were overgrown by a low doped p-epilayer whose surface layer was compensated up to the depth of 0.1 to 0.3 μm. The surface was then oxygen terminated and covered by evaporated Mo/Au Schottky contacts. The bottom ohmic contact to p+-substrate was formed by Ti/Au bi-layer. Current- and capacitance-voltage characteristics of the realized diodes were measured at temperatures ranging from 25 to 180 °C. At room temperature, the realized diodes show high forward current densities JF = 100 A/cm2 and low differential ON-state specific resistance Ron_sp = 3.7 mΩ.cm2 at forward voltage VF = 4 V and a very low leakage (JR < 10−9 A/cm2) in the blocking regime.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Diamond and Related Materials

ISSN

0925-9635

e-ISSN

1879-0062

Svazek periodika

146

Číslo periodika v rámci svazku

June

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

7

Strana od-do

111180

Kód UT WoS článku

001237466900001

EID výsledku v databázi Scopus

2-s2.0-85192565705