Low-resistance ohmic contacts on boron-doped {113} oriented homoepitaxial diamond layers

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00556036" target="_blank" >RIV/68378271:_____/22:00556036 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21230/22:00355201 RIV/68407700:21460/22:00355201

Výsledek na webu

<a href="https://doi.org/10.1016/j.diamond.2021.108797" target="_blank" >https://doi.org/10.1016/j.diamond.2021.108797</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.diamond.2021.108797" target="_blank" >10.1016/j.diamond.2021.108797</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Low-resistance ohmic contacts on boron-doped {113} oriented homoepitaxial diamond layers

Popis výsledku v původním jazyce

Refractory metals (titanium, molybdenum, and zirconium) with a gold overlayer were used to form ohmic contacts on {113}-oriented boron doped diamond epitaxial layers (boron concentration ranging from 1019 to 1021 cm−3). Morphology and thickness of deposited layers were determined by AFM and X-SEM, resistivity, carrier concentration and mobility were determined by Hall measurement. Specific contact resistance RCsp of evaporated Ti/Au, Zr/Au, and Mo/Au contacts was measured using c-TLM structures after different annealing stages at temperatures up to 850 °C. Results show that on layers with {113} orientation it is possible to achieve ohmic contacts of comparable quality as for layers with {100} orientation. For all three metal systems, the lowest values for specific contact resistance reached 1 × 10−6 Ω.cm2. Ti/Au contacts show a stable ohmic behavior over the whole range of annealing temperatures, while Mo/Ti contacts had to be annealed above 500 °C to reduce the Schottky barrier and achieve good ohmic contact on lower B doped layers.

Název v anglickém jazyce

Low-resistance ohmic contacts on boron-doped {113} oriented homoepitaxial diamond layers

Popis výsledku anglicky

Refractory metals (titanium, molybdenum, and zirconium) with a gold overlayer were used to form ohmic contacts on {113}-oriented boron doped diamond epitaxial layers (boron concentration ranging from 1019 to 1021 cm−3). Morphology and thickness of deposited layers were determined by AFM and X-SEM, resistivity, carrier concentration and mobility were determined by Hall measurement. Specific contact resistance RCsp of evaporated Ti/Au, Zr/Au, and Mo/Au contacts was measured using c-TLM structures after different annealing stages at temperatures up to 850 °C. Results show that on layers with {113} orientation it is possible to achieve ohmic contacts of comparable quality as for layers with {100} orientation. For all three metal systems, the lowest values for specific contact resistance reached 1 × 10−6 Ω.cm2. Ti/Au contacts show a stable ohmic behavior over the whole range of annealing temperatures, while Mo/Ti contacts had to be annealed above 500 °C to reduce the Schottky barrier and achieve good ohmic contact on lower B doped layers.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Diamond and Related Materials

ISSN

0925-9635

e-ISSN

1879-0062

Svazek periodika

121

Číslo periodika v rámci svazku

Jan

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

7

Strana od-do

108797

Kód UT WoS článku

000787823400002

EID výsledku v databázi Scopus

2-s2.0-85121898882