Characterization of the Very Low Contact Resistance on Heavily Boron Doped (113) CVD Diamond

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F21%3A00356603" target="_blank" >RIV/68407700:21230/21:00356603 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21460/21:00356603

Výsledek na webu

<a href="https://doi.org/10.37904/nanocon.2021.4320" target="_blank" >https://doi.org/10.37904/nanocon.2021.4320</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.37904/nanocon.2021.4320" target="_blank" >10.37904/nanocon.2021.4320</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Characterization of the Very Low Contact Resistance on Heavily Boron Doped (113) CVD Diamond

Popis výsledku v původním jazyce

The low resistance of ohmic contacts on diamond layers is important for the fabrication of diamond power electronic devices with fast switching capabilities for future high voltage applications. The low barrier height between the metal and diamond, high level of boron doping and annealing at elevated temperatures are the most critical parameters to reach the lowest contact resistivity. In this work, we report on titanium/gold ohmic contacts prepared on the heavily boron-doped (113) epitaxial diamond layers. The contact resistance has been characterized by the Circular Transmission Line Model (cTLM) structures. We used the analytical model of field enhanced emission, tunneling and the image force influence including Fermi level position dependence on the boron concentration for theoretical Ti/Au contact analysis and the Silvaco TCAD 2D simulation to estimate the measurement error associated with the nonzero metal resistance. We show that the resulting simulation values are consistent with the experimental results.

Název v anglickém jazyce

Characterization of the Very Low Contact Resistance on Heavily Boron Doped (113) CVD Diamond

Popis výsledku anglicky

The low resistance of ohmic contacts on diamond layers is important for the fabrication of diamond power electronic devices with fast switching capabilities for future high voltage applications. The low barrier height between the metal and diamond, high level of boron doping and annealing at elevated temperatures are the most critical parameters to reach the lowest contact resistivity. In this work, we report on titanium/gold ohmic contacts prepared on the heavily boron-doped (113) epitaxial diamond layers. The contact resistance has been characterized by the Circular Transmission Line Model (cTLM) structures. We used the analytical model of field enhanced emission, tunneling and the image force influence including Fermi level position dependence on the boron concentration for theoretical Ti/Au contact analysis and the Silvaco TCAD 2D simulation to estimate the measurement error associated with the nonzero metal resistance. We show that the resulting simulation values are consistent with the experimental results.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Nanocon 2021 - ABSTRACTS

ISBN

978-80-88365-00-6

ISSN

—

e-ISSN

—

Počet stran výsledku

6

Strana od-do

47-52

Název nakladatele

TANGER

Místo vydání

Ostrava

Místo konání akce

Brno

Datum konání akce

20. 10. 2021

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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