Comparison of ohmic contact formation of titanium and zirconium on boron doped diamond

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21460%2F18%3A00331256" target="_blank" >RIV/68407700:21460/18:00331256 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/18:00501101 RIV/61388955:_____/18:00501101

Výsledek na webu

<a href="https://doi.org/10.1557/adv.2018.39" target="_blank" >https://doi.org/10.1557/adv.2018.39</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1557/adv.2018.39" target="_blank" >10.1557/adv.2018.39</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Comparison of ohmic contact formation of titanium and zirconium on boron doped diamond

Popis výsledku v původním jazyce

With a high affinity to carbon comparable to titanium and an electrically conductive carbide, zirconium has potential to form ohmic contact on boron doped diamond. In this work, formation of ohmic contacts on boron doped diamond using zirconium is studied in comparison to titanium. Boron doped diamond epitaxial layers have been grown by microwave plasma enhanced chemical vapour deposition with various B/C ratio. Circular Transmission Line Model structures were fabricated using standard micro-fabrication technologies. Specific contact resistance of fabricated contacts was determined for different boron concentrations and for various annealing temperatures. Ohmic contacts using zirconium are formed after annealing at 400 °C. Specific contact resistance steadily decreases with high temperature annealing down to a value of ca. 1 mΩ.cm2 after annealing at 700 °C for highly boron doped diamond. In comparison, titanium contact fabricated on highly doped diamond appears not stable under high temperature annealing.

Název v anglickém jazyce

Comparison of ohmic contact formation of titanium and zirconium on boron doped diamond

Popis výsledku anglicky

With a high affinity to carbon comparable to titanium and an electrically conductive carbide, zirconium has potential to form ohmic contact on boron doped diamond. In this work, formation of ohmic contacts on boron doped diamond using zirconium is studied in comparison to titanium. Boron doped diamond epitaxial layers have been grown by microwave plasma enhanced chemical vapour deposition with various B/C ratio. Circular Transmission Line Model structures were fabricated using standard micro-fabrication technologies. Specific contact resistance of fabricated contacts was determined for different boron concentrations and for various annealing temperatures. Ohmic contacts using zirconium are formed after annealing at 400 °C. Specific contact resistance steadily decreases with high temperature annealing down to a value of ca. 1 mΩ.cm2 after annealing at 700 °C for highly boron doped diamond. In comparison, titanium contact fabricated on highly doped diamond appears not stable under high temperature annealing.

Druh

J_ost - Ostatní články v recenzovaných periodicích

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

MRS Advances

ISSN

2059-8521

e-ISSN

2059-8521

Svazek periodika

3

Číslo periodika v rámci svazku

33

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

5

Strana od-do

1931-1935

Kód UT WoS článku

000438845800010

EID výsledku v databázi Scopus

2-s2.0-85049554543