The study of gamma-radiation induced displacement damage in n plus -in- p silicon diodes

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F24%3A10492075" target="_blank" >RIV/00216208:11320/24:10492075 - isvavai.cz</a>

Výsledek na webu

<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=HiEjPZBMXn" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=HiEjPZBMXn</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.nima.2024.169432" target="_blank" >10.1016/j.nima.2024.169432</a>

Jazyk výsledku

angličtina

Název v původním jazyce

The study of gamma-radiation induced displacement damage in n plus -in- p silicon diodes

Popis výsledku v původním jazyce

The bulk damage of p-type silicon sensors caused by gamma irradiation with high total ionizing doses has been investigated. The study was carried out on different types of n +-in- p silicon diodes with different oxygen concentrations and silicon bulk resistivities. The Secondary-Ion Mass Spectrometry technique was used to determine the relative concentration of oxygen in the individual samples. The measured diodes were irradiated by a 60 Co gamma source to total ionizing doses ranging from 0.50 up to 8.28 MGy, and annealed for 80 min at 60 degrees C. The main goal of the study was to characterize the gamma-radiation induced displacement damage by measuring I-V and C-V characteristics, and the evolution of the full depletion voltage with the total ionizing dose. The Transient Current Technique was used to verify the full depletion voltage and to extract the electric field distribution and the sign of the space charge in the silicon diodes irradiated to the lowest and the highest delivered total ionizing doses. The results show a linear increase of the bulk leakage current with the total ionizing dose, with the damage coefficient being dependent on initial resistivity and oxygen concentration of the silicon diode. The effective doping concentration and full depletion voltage decrease significantly with an increasing total ionizing dose, before starting to increase again at a specific dose. We assume that the initial decrease in the effective doping concentration is caused by the effect of acceptor removal. An additional notable finding of this study is that the bulk leakage current and C-V characteristics of the gamma-irradiated diodes do not show any evidence of an annealing effect.

Název v anglickém jazyce

The study of gamma-radiation induced displacement damage in n plus -in- p silicon diodes

Popis výsledku anglicky

The bulk damage of p-type silicon sensors caused by gamma irradiation with high total ionizing doses has been investigated. The study was carried out on different types of n +-in- p silicon diodes with different oxygen concentrations and silicon bulk resistivities. The Secondary-Ion Mass Spectrometry technique was used to determine the relative concentration of oxygen in the individual samples. The measured diodes were irradiated by a 60 Co gamma source to total ionizing doses ranging from 0.50 up to 8.28 MGy, and annealed for 80 min at 60 degrees C. The main goal of the study was to characterize the gamma-radiation induced displacement damage by measuring I-V and C-V characteristics, and the evolution of the full depletion voltage with the total ionizing dose. The Transient Current Technique was used to verify the full depletion voltage and to extract the electric field distribution and the sign of the space charge in the silicon diodes irradiated to the lowest and the highest delivered total ionizing doses. The results show a linear increase of the bulk leakage current with the total ionizing dose, with the damage coefficient being dependent on initial resistivity and oxygen concentration of the silicon diode. The effective doping concentration and full depletion voltage decrease significantly with an increasing total ionizing dose, before starting to increase again at a specific dose. We assume that the initial decrease in the effective doping concentration is caused by the effect of acceptor removal. An additional notable finding of this study is that the bulk leakage current and C-V characteristics of the gamma-irradiated diodes do not show any evidence of an annealing effect.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10300 - Physical sciences

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nuclear Instruments &amp; Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment

ISSN

0168-9002

e-ISSN

1872-9576

Svazek periodika

1064

Číslo periodika v rámci svazku

Jul

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

7

Strana od-do

169432

Kód UT WoS článku

001264851600001

EID výsledku v databázi Scopus

2-s2.0-85193598762