Influence of overlayers on determination of the optical constants of ZnSe thin films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F02%3A00008572" target="_blank" >RIV/00216224:14310/02:00008572 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Influence of overlayers on determination of the optical constants of ZnSe thin films

Popis výsledku v původním jazyce

In this article a multisample modification of variable angle spectroscopic ellipsometry is used to characterize ZnSe thin films prepared by molecular beam epitaxy on substrates formed by GaAs single crystals. Atomic force microscopy (AFM) is employed tocharacterize the morphology of the upper boundaries of these films. To interpret the ellipsometric data a relatively complicated physical model that contains a rough overlayer between the ambient and the ZnSe film and a transition layer between the GaAssubstrate and the ZnSe film is employed. Several models of dispersion of the optical constants of the overlayers are examined to interpret the ellipsometric data. It is shown that the choice of overlayer dispersion model has a strong influence on determining the optical constants and dielectric function of the ZnSe films in the near-UV region. Within the visible region there are no differences between the overlayer dispersion models regarding determination of the ZnSe optical constants.

Název v anglickém jazyce

Influence of overlayers on determination of the optical constants of ZnSe thin films

Popis výsledku anglicky

In this article a multisample modification of variable angle spectroscopic ellipsometry is used to characterize ZnSe thin films prepared by molecular beam epitaxy on substrates formed by GaAs single crystals. Atomic force microscopy (AFM) is employed tocharacterize the morphology of the upper boundaries of these films. To interpret the ellipsometric data a relatively complicated physical model that contains a rough overlayer between the ambient and the ZnSe film and a transition layer between the GaAssubstrate and the ZnSe film is employed. Several models of dispersion of the optical constants of the overlayers are examined to interpret the ellipsometric data. It is shown that the choice of overlayer dispersion model has a strong influence on determining the optical constants and dielectric function of the ZnSe films in the near-UV region. Within the visible region there are no differences between the overlayer dispersion models regarding determination of the ZnSe optical constants.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2002

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Applied Physics

ISSN

0021-8979

e-ISSN

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Svazek periodika

92

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

8

Strana od-do

1873-1880

Kód UT WoS článku

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EID výsledku v databázi Scopus

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