Lokální analýza rozorientace křídel laterálně přerostlých GaN zobrazením rocking křivek

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F05%3A00013719" target="_blank" >RIV/00216224:14310/05:00013719 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Local wing tilt analysis of laterally overgrown GaN by x-ray rocking curve imaging

Popis výsledku v původním jazyce

We report on recent advances in spatially resolved x-ray diffraction, extending the technique known as rocking curve imaging down to 1--2 um spatial resolution. Application to a set of gallium nitride samples grown by epitaxial lateral overgrowth (ELO) shows the potential of the technique. Quantitative information on crystallographic misorientations and lattice quality can be obtained by direct imaging with high lateral resolution. Results from two samples of ELO-GaN grown on different substrates are compared. Tilt in individual lateral periods of the ELO structure can be quantified. Local tilt fluctuations are distinguished from macroscopic variations (curvature). The local lattice quality can be investigated via the peak width of diffraction profilesrecorded in individual camera pixels. The peak broadening previously observed in laboratory x-ray diffraction measurements is found to have (at least) two different reasons. In both cases, peak broadening does not indicate a degradation

Název v anglickém jazyce

Local wing tilt analysis of laterally overgrown GaN by x-ray rocking curve imaging

Popis výsledku anglicky

We report on recent advances in spatially resolved x-ray diffraction, extending the technique known as rocking curve imaging down to 1--2 um spatial resolution. Application to a set of gallium nitride samples grown by epitaxial lateral overgrowth (ELO) shows the potential of the technique. Quantitative information on crystallographic misorientations and lattice quality can be obtained by direct imaging with high lateral resolution. Results from two samples of ELO-GaN grown on different substrates are compared. Tilt in individual lateral periods of the ELO structure can be quantified. Local tilt fluctuations are distinguished from macroscopic variations (curvature). The local lattice quality can be investigated via the peak width of diffraction profilesrecorded in individual camera pixels. The peak broadening previously observed in laboratory x-ray diffraction measurements is found to have (at least) two different reasons. In both cases, peak broadening does not indicate a degradation

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2005

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of physics D: Applied physics

ISSN

0022-3727

e-ISSN

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Svazek periodika

38

Číslo periodika v rámci svazku

10A

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

5

Strana od-do

"A50"-"A5"

Kód UT WoS článku

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EID výsledku v databázi Scopus

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