Optické vlastnosti a UV modifikace low-k materiálů

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F08%3A00027845" target="_blank" >RIV/00216224:14310/08:00027845 - isvavai.cz</a>

Výsledek na webu

—

DOI - Digital Object Identifier

—

Jazyk výsledku

angličtina

Název v původním jazyce

Optical characteristics and UV modification of low-k materials

Popis výsledku v původním jazyce

We present a study of optical characteristics in visible and vacuum ultra-violet range of porous low-k dielectric films (prepared by chemical vapor deposition), and the constituent materials: Carbon doped oxide (SiCOH) matrix and organic porogen. The materials have been deposited as thin film samples and cured by thermal annealing and UV irradiation for various times. The optical properties of the films have been studied by variable angle spectroscopic ellipsometry in range from 2 eV to 9 eV and the composition has been analyzed by Fourier-transformed infrared spectroscopy. The analysis of the optical response of the porous dielectric as a mixture of matrix material, porogen and voids shows existence of decomposed porogen residuals inside the pores, even for long curing times. It is observed that the variation of deposition and curing conditions can control the amount of porogen residuals and the final porosity.

Název v anglickém jazyce

Optical characteristics and UV modification of low-k materials

Popis výsledku anglicky

We present a study of optical characteristics in visible and vacuum ultra-violet range of porous low-k dielectric films (prepared by chemical vapor deposition), and the constituent materials: Carbon doped oxide (SiCOH) matrix and organic porogen. The materials have been deposited as thin film samples and cured by thermal annealing and UV irradiation for various times. The optical properties of the films have been studied by variable angle spectroscopic ellipsometry in range from 2 eV to 9 eV and the composition has been analyzed by Fourier-transformed infrared spectroscopy. The analysis of the optical response of the porous dielectric as a mixture of matrix material, porogen and voids shows existence of decomposed porogen residuals inside the pores, even for long curing times. It is observed that the variation of deposition and curing conditions can control the amount of porogen residuals and the final porosity.

Druh

D - Stať ve sborníku

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

—

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2008

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

9th International Conference on Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008.

ISBN

978-1-4244-2185-5

ISSN

—

e-ISSN

—

Počet stran výsledku

4

Strana od-do

—

Název nakladatele

IEEE

Místo vydání

Beijing

Místo konání akce

Beijing

Datum konání akce

1. 1. 2008

Typ akce podle státní příslušnosti

CST - Celostátní akce

Kód UT WoS článku

—