Engineering of chemical and physical properties of low-k materials by different wavelength of UV light

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F08%3A00038412" target="_blank" >RIV/00216224:14310/08:00038412 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Engineering of chemical and physical properties of low-k materials by different wavelength of UV light

Popis výsledku v původním jazyce

SiCOH low-k films were deposited by PECVD with variable flow rates of porogen and matrix precursors and variable substrate temperature and RF power. Two precursor ratios were chosen leading to 1) material with higher target porosity around 33% and targetk-value 2.3 and 2) material with lower porosity around 25% and target k-value 2.5. After deposition, the samples were UV-cured on temperature above 400 C in nitrogen ambient. Two types of curing lamps were used for the experiments: 1) lamps A emitting photons with energies higher than 6.5 eV (190 nm) and 2) lamps B with photon energies below 6.2 eV (200 nm). For all properties evaluated, irradiation at wavelengths below 190 nm resulted in more pronounced changes than at longer wavelengths. Lamps A provide fast decrease of porogen content, conversion of the Si-O-Si bonds from cage to network. However, degradation of Si-CH3 bonds is significant, as well as formation of H-SiO (Si-H) bonds and amorphous carbon like porogen residue.

Název v anglickém jazyce

Engineering of chemical and physical properties of low-k materials by different wavelength of UV light

Popis výsledku anglicky

SiCOH low-k films were deposited by PECVD with variable flow rates of porogen and matrix precursors and variable substrate temperature and RF power. Two precursor ratios were chosen leading to 1) material with higher target porosity around 33% and targetk-value 2.3 and 2) material with lower porosity around 25% and target k-value 2.5. After deposition, the samples were UV-cured on temperature above 400 C in nitrogen ambient. Two types of curing lamps were used for the experiments: 1) lamps A emitting photons with energies higher than 6.5 eV (190 nm) and 2) lamps B with photon energies below 6.2 eV (200 nm). For all properties evaluated, irradiation at wavelengths below 190 nm resulted in more pronounced changes than at longer wavelengths. Lamps A provide fast decrease of porogen content, conversion of the Si-O-Si bonds from cage to network. However, degradation of Si-CH3 bonds is significant, as well as formation of H-SiO (Si-H) bonds and amorphous carbon like porogen residue.

Druh

O - Ostatní výsledky

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2008

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů