Effect of ultraviolet curing wavelength on low-k dielectric material properties and plasma damage resistance

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F11%3A00052302" target="_blank" >RIV/00216224:14310/11:00052302 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.tsf.2011.01.339" target="_blank" >http://dx.doi.org/10.1016/j.tsf.2011.01.339</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.tsf.2011.01.339" target="_blank" >10.1016/j.tsf.2011.01.339</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Effect of ultraviolet curing wavelength on low-k dielectric material properties and plasma damage resistance

Popis výsledku v původním jazyce

A set of SiCOH low dielectric constant films (low-k) has been deposited by plasma enhanced chemical vapor deposition using variable flow rates of the porogen (sacrificial phase) and matrix precursors. During the deposition, two different substrate temperatures and radio frequency power settings were applied. Next, the deposited films were cured by the UV assisted annealing (UV-cure) using two industrial UV light sources: a monochromatic UV source with intensity maximum at gimel = 172 nm (lamp A) and a broadband UV source with intensity spectrum distributed below 200 nm (lamp B). This set of various low-k films has been additionally exposed to NH3 plasma (used for the CuOx reduction during Cu/low-k integration) in order to evaluate the effect of the film preparation conditions on the plasma damage resistance of low-k material.

Název v anglickém jazyce

Effect of ultraviolet curing wavelength on low-k dielectric material properties and plasma damage resistance

Popis výsledku anglicky

A set of SiCOH low dielectric constant films (low-k) has been deposited by plasma enhanced chemical vapor deposition using variable flow rates of the porogen (sacrificial phase) and matrix precursors. During the deposition, two different substrate temperatures and radio frequency power settings were applied. Next, the deposited films were cured by the UV assisted annealing (UV-cure) using two industrial UV light sources: a monochromatic UV source with intensity maximum at gimel = 172 nm (lamp A) and a broadband UV source with intensity spectrum distributed below 200 nm (lamp B). This set of various low-k films has been additionally exposed to NH3 plasma (used for the CuOx reduction during Cu/low-k integration) in order to evaluate the effect of the film preparation conditions on the plasma damage resistance of low-k material.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

—

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Thin Solid Films

ISSN

0040-6090

e-ISSN

—

Svazek periodika

519

Číslo periodika v rámci svazku

11

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

8

Strana od-do

3619-3626

Kód UT WoS článku

000289333400030

EID výsledku v databázi Scopus

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