Optical characterization of SiO2 thin films using universal dispersion model over wide spectral range

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F16%3A00094359" target="_blank" >RIV/00216224:14310/16:00094359 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1117/12.2227580" target="_blank" >http://dx.doi.org/10.1117/12.2227580</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.2227580" target="_blank" >10.1117/12.2227580</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Optical characterization of SiO2 thin films using universal dispersion model over wide spectral range

Popis výsledku v původním jazyce

Vacuum evaporated SiO2 thin films are very important in a design and manufacturing of optical devices produced in optics industry. In this contribution a reliable and precise optical characterization of such SiO2 thin films is performed using the combined method of spectrophotometry at normal incidence and variable-angle spectroscopic ellipsometry applied over spectral range from far IR to extreme UV (0.01-45 eV). This method uses the Universal Dispersion Model based on parametrization of the joint density of states and structural model comprising film defects such as nanometric boundary roughness, inhomogeneity and area non-uniformity. The optical characterization over the wide spectral range provides not only the spectral dependencies of the optical constants of the films within the wide range but, more significantly, it enables their correct and precise determination within the spectral range of interest, i.e. the range of their transparency. Furthermore, measurements in the ranges of film absorption, i. e. phonon excitations in IR and electron excitations in UV, reveal information about the material structure. The results of the optical characterization of the SiO2 thin films prepared on silicon single crystal substrates under various technological conditions are presented in detail for two selected samples. Beside film thicknesses and values of dispersion parameters and spectral dependencies of the optical constants of the SiO2 films, the characterization also enables quantification of film defects and their parameters are presented as well. The results concerning the optical constants of SiO2 films are compared with silica optical constants determined in our earlier studies.

Název v anglickém jazyce

Optical characterization of SiO2 thin films using universal dispersion model over wide spectral range

Popis výsledku anglicky

Vacuum evaporated SiO2 thin films are very important in a design and manufacturing of optical devices produced in optics industry. In this contribution a reliable and precise optical characterization of such SiO2 thin films is performed using the combined method of spectrophotometry at normal incidence and variable-angle spectroscopic ellipsometry applied over spectral range from far IR to extreme UV (0.01-45 eV). This method uses the Universal Dispersion Model based on parametrization of the joint density of states and structural model comprising film defects such as nanometric boundary roughness, inhomogeneity and area non-uniformity. The optical characterization over the wide spectral range provides not only the spectral dependencies of the optical constants of the films within the wide range but, more significantly, it enables their correct and precise determination within the spectral range of interest, i.e. the range of their transparency. Furthermore, measurements in the ranges of film absorption, i. e. phonon excitations in IR and electron excitations in UV, reveal information about the material structure. The results of the optical characterization of the SiO2 thin films prepared on silicon single crystal substrates under various technological conditions are presented in detail for two selected samples. Beside film thicknesses and values of dispersion parameters and spectral dependencies of the optical constants of the SiO2 films, the characterization also enables quantification of film defects and their parameters are presented as well. The results concerning the optical constants of SiO2 films are compared with silica optical constants determined in our earlier studies.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Conference on Optical Micro- and Nanometrology VI

ISBN

9781510601352

ISSN

0277-786X

e-ISSN

—

Počet stran výsledku

15

Strana od-do

„989014-1“-„989014-15“

Název nakladatele

SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA

Místo vydání

BELLINGHAM

Místo konání akce

Brussels, BELGIUM

Datum konání akce

5. 4. 2016

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000381887800035