Atmospheric pressure plasma etching of silicon dioxide using diffuse coplanar surface barrier discharge generated in pure hydrogen

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F17%3A00095958" target="_blank" >RIV/00216224:14310/17:00095958 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.surfcoat.2016.11.036" target="_blank" >http://dx.doi.org/10.1016/j.surfcoat.2016.11.036</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.surfcoat.2016.11.036" target="_blank" >10.1016/j.surfcoat.2016.11.036</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Atmospheric pressure plasma etching of silicon dioxide using diffuse coplanar surface barrier discharge generated in pure hydrogen

Popis výsledku v původním jazyce

We report on the method of dry etching of silicon dioxide (SiO2) layers by cold plasma treatment at atmospheric pressure in pure hydrogen using Diffuse Coplanar Surface Barrier Discharge (DCSBD). The SiO2 etching rate was estimated at ~ 1 nm/min. The studied plasma process was found to be the composition of plasma induced reduction and etching. The changes in surface morphology of etched samples were observed by scanning electron microscopy. X-ray photoelectron spectroscopy analysis was applied to identify the surface chemical changes due to the reduction processes. Two regimes of plasma treatment were examined. While the dynamic treatment, where the treated surface was moved relative to the plasma source, led to a homogeneous process, the treatment in static conditions resulted in a stripe-type pattern on the surface of the samples reflecting the electrode structure of the plasma source. The results provide a basis for a new and simple way to prepare clean, native oxide free silicon surfaces in dry plasma process at atmospheric pressure.

Název v anglickém jazyce

Atmospheric pressure plasma etching of silicon dioxide using diffuse coplanar surface barrier discharge generated in pure hydrogen

Popis výsledku anglicky

We report on the method of dry etching of silicon dioxide (SiO2) layers by cold plasma treatment at atmospheric pressure in pure hydrogen using Diffuse Coplanar Surface Barrier Discharge (DCSBD). The SiO2 etching rate was estimated at ~ 1 nm/min. The studied plasma process was found to be the composition of plasma induced reduction and etching. The changes in surface morphology of etched samples were observed by scanning electron microscopy. X-ray photoelectron spectroscopy analysis was applied to identify the surface chemical changes due to the reduction processes. Two regimes of plasma treatment were examined. While the dynamic treatment, where the treated surface was moved relative to the plasma source, led to a homogeneous process, the treatment in static conditions resulted in a stripe-type pattern on the surface of the samples reflecting the electrode structure of the plasma source. The results provide a basis for a new and simple way to prepare clean, native oxide free silicon surfaces in dry plasma process at atmospheric pressure.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

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OECD FORD obor

10305 - Fluids and plasma physics (including surface physics)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Surface & coatings technology

ISSN

0257-8972

e-ISSN

—

Svazek periodika

309

Číslo periodika v rámci svazku

January

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

8

Strana od-do

301-308

Kód UT WoS článku

000396184400036

EID výsledku v databázi Scopus

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