Optical characterization of hafnia films deposited by ALD on copper cold-rolled sheets by difference ellipsometry
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F17%3A00097950" target="_blank" >RIV/00216224:14310/17:00097950 - isvavai.cz</a>
Výsledek na webu
<a href="http://dx.doi.org/10.1016/j.apsusc.2016.12.164" target="_blank" >http://dx.doi.org/10.1016/j.apsusc.2016.12.164</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.apsusc.2016.12.164" target="_blank" >10.1016/j.apsusc.2016.12.164</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Optical characterization of hafnia films deposited by ALD on copper cold-rolled sheets by difference ellipsometry
Popis výsledku v původním jazyce
Hafnium oxide (HfO2) thin films could be potentially used as thermal diffusion barrier coatings for copper absorbers used in solar thermal collectors. Atomic layer deposition (ALD) was used to deposit thin, dense, non-columnar HfO2 films on copper sheets, which are established base materials for solar absorbers. The aim of this work is to find a simple and efficient method for quantitative characterization of thin hafnium oxide films deposited on imperfect rough copper sheets. The difference ellipsometry applied in infrared region was found to be a practical tool for non-destructive characterization of thin films deposited onto metal surfaces even when these surfaces are imperfect. The presented method enables us not only to identify the presence of hafnium oxide but also to perform quantitative characterization, i.e. to determine the thickness of the film. Moreover, a simple method, in which the thickness is determined from the height of the structure in the difference ellipsometric data, is presented. This method is demonstrated on HfO2 film with nominal thickness 60 nm deposited by ALD on copper cold-rolled sheet.
Název v anglickém jazyce
Optical characterization of hafnia films deposited by ALD on copper cold-rolled sheets by difference ellipsometry
Popis výsledku anglicky
Hafnium oxide (HfO2) thin films could be potentially used as thermal diffusion barrier coatings for copper absorbers used in solar thermal collectors. Atomic layer deposition (ALD) was used to deposit thin, dense, non-columnar HfO2 films on copper sheets, which are established base materials for solar absorbers. The aim of this work is to find a simple and efficient method for quantitative characterization of thin hafnium oxide films deposited on imperfect rough copper sheets. The difference ellipsometry applied in infrared region was found to be a practical tool for non-destructive characterization of thin films deposited onto metal surfaces even when these surfaces are imperfect. The presented method enables us not only to identify the presence of hafnium oxide but also to perform quantitative characterization, i.e. to determine the thickness of the film. Moreover, a simple method, in which the thickness is determined from the height of the structure in the difference ellipsometric data, is presented. This method is demonstrated on HfO2 film with nominal thickness 60 nm deposited by ALD on copper cold-rolled sheet.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Návaznosti výsledku
Projekt
<a href="/cs/project/LO1411" target="_blank" >LO1411: Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy</a><br>
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Ostatní
Rok uplatnění
2017
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Applied Surface Science
ISSN
0169-4332
e-ISSN
—
Svazek periodika
421
Číslo periodika v rámci svazku
November
Stát vydavatele periodika
NL - Nizozemsko
Počet stran výsledku
4
Strana od-do
420-423
Kód UT WoS článku
000408756700024
EID výsledku v databázi Scopus
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