Preparation of high-quality stress-free (001) aluminum nitride thin film using a dual Kaufman ion-beam source setup

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F19%3A00109304" target="_blank" >RIV/00216224:14310/19:00109304 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216305:26620/19:PU130122

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.tsf.2018.12.035" target="_blank" >http://dx.doi.org/10.1016/j.tsf.2018.12.035</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.tsf.2018.12.035" target="_blank" >10.1016/j.tsf.2018.12.035</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Preparation of high-quality stress-free (001) aluminum nitride thin film using a dual Kaufman ion-beam source setup

Popis výsledku v původním jazyce

We proposed and demonstrated a preparation method of (001) preferentially oriented stress-free AlN piezoelectric thin films. The AlN thin films were deposited by a reactive sputtering technique at substrate temperatures up to 330 degrees C using a dual Kaufman ion-beam source setup. We deposited the AlN on Si (100), Si (111), amorphous SiO2, and a (001) preferentially oriented Ti thin film and compared their crystallographic, optical, and piezoelectric properties. The AlN thin films deposited on the (001) preferentially oriented Ti thin films have the highest crystallographic quality. The stress-free AlN reached a high value of the piezoelectric coefficient d(33) = (7.33 +/- 0.08) pC.N-1. The properties of the AlN thin film prepared at such low temperatures are suitable for numerous microelectromechanical systems, piezoelectric sensors, and actuators monolithically integrated with complementary metal-oxide-semiconductor signal-processing circuits.

Název v anglickém jazyce

Preparation of high-quality stress-free (001) aluminum nitride thin film using a dual Kaufman ion-beam source setup

Popis výsledku anglicky

We proposed and demonstrated a preparation method of (001) preferentially oriented stress-free AlN piezoelectric thin films. The AlN thin films were deposited by a reactive sputtering technique at substrate temperatures up to 330 degrees C using a dual Kaufman ion-beam source setup. We deposited the AlN on Si (100), Si (111), amorphous SiO2, and a (001) preferentially oriented Ti thin film and compared their crystallographic, optical, and piezoelectric properties. The AlN thin films deposited on the (001) preferentially oriented Ti thin films have the highest crystallographic quality. The stress-free AlN reached a high value of the piezoelectric coefficient d(33) = (7.33 +/- 0.08) pC.N-1. The properties of the AlN thin film prepared at such low temperatures are suitable for numerous microelectromechanical systems, piezoelectric sensors, and actuators monolithically integrated with complementary metal-oxide-semiconductor signal-processing circuits.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/LM2015041" target="_blank" >LM2015041: CEITEC Nano</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Thin Solid Films

ISSN

0040-6090

e-ISSN

—

Svazek periodika

670

Číslo periodika v rámci svazku

December

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

8

Strana od-do

105-112

Kód UT WoS článku

000454719000016

EID výsledku v databázi Scopus

2-s2.0-85058799519