Aluminum Nitride with High d33 Piezoelectric Coefficient for MEMS Applications

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F19%3APU138194" target="_blank" >RIV/00216305:26620/19:PU138194 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Aluminum Nitride with High d33 Piezoelectric Coefficient for MEMS Applications

Popis výsledku v původním jazyce

We proposed and demonstrated a preparation method of (001) preferentially oriented stress-free AlN piezoelectric thin films with high d33 piezoelectric coefficient for microelectromechanical systems (MEMS) applications. We used dual Kaufman ion-beam source setup in configuration for reactive sputtering method of AlN thin films. Such AlN was prepared in temperature range between 100 °C and 330 °C. AlN thin films were deposited on Si (100), Si (111), amorphous SiO2, and a (001) preferentially oriented Ti thin film. We compared their crystallographic and piezoelectric properties. We found out, that the highest crystallographic quality was reached for AlN thin films deposited on (001) preferentially oriented Ti thin films. The well optimized AlN thin film without residual stress reached the d33 value = (7.33 ± 0.08) pC·N−1. It means that such way used for AlN fabrication at low temperature is well suitable for preparation of piezoelectric layer for MEMS and complementary metal-oxide-semiconductor technologies involving integrated circuits. This AlN can be used for sensors as well as actuators.

Název v anglickém jazyce

Aluminum Nitride with High d33 Piezoelectric Coefficient for MEMS Applications

Popis výsledku anglicky

We proposed and demonstrated a preparation method of (001) preferentially oriented stress-free AlN piezoelectric thin films with high d33 piezoelectric coefficient for microelectromechanical systems (MEMS) applications. We used dual Kaufman ion-beam source setup in configuration for reactive sputtering method of AlN thin films. Such AlN was prepared in temperature range between 100 °C and 330 °C. AlN thin films were deposited on Si (100), Si (111), amorphous SiO2, and a (001) preferentially oriented Ti thin film. We compared their crystallographic and piezoelectric properties. We found out, that the highest crystallographic quality was reached for AlN thin films deposited on (001) preferentially oriented Ti thin films. The well optimized AlN thin film without residual stress reached the d33 value = (7.33 ± 0.08) pC·N−1. It means that such way used for AlN fabrication at low temperature is well suitable for preparation of piezoelectric layer for MEMS and complementary metal-oxide-semiconductor technologies involving integrated circuits. This AlN can be used for sensors as well as actuators.

Druh

D - Stať ve sborníku

CEP obor

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OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

19th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications (Power MEMS) Conference Proceedings

ISBN

978-1-7281-5638-5

ISSN

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e-ISSN

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Počet stran výsledku

4

Strana od-do

1-4

Název nakladatele

IEEE

Místo vydání

NEW YORK

Místo konání akce

Krakow

Datum konání akce

2. 12. 2019

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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