The Radon transform as a tool for 3D reciprocal-space mapping of epitaxial microcrystals

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F22%3A00127695" target="_blank" >RIV/00216224:14310/22:00127695 - isvavai.cz</a>

Výsledek na webu

<a href="https://onlinelibrary.wiley.com/iucr/doi/10.1107/S1600576722004885" target="_blank" >https://onlinelibrary.wiley.com/iucr/doi/10.1107/S1600576722004885</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1107/S1600576722004885" target="_blank" >10.1107/S1600576722004885</a>

Jazyk výsledku

angličtina

Název v původním jazyce

The Radon transform as a tool for 3D reciprocal-space mapping of epitaxial microcrystals

Popis výsledku v původním jazyce

This work presents a new approach suitable for mapping reciprocal space in three dimensions with standard laboratory equipment and a typical X-ray diffraction setup. The method is based on symmetric and coplanar high-resolution X-ray diffraction, ideally realized using 2D X-ray pixel detectors. The processing of experimental data exploits the Radon transform commonly used in medical and materials science. It is shown that this technique can also be used for diffraction mapping in reciprocal space even if a highly collimated beam is not available. The application of the method is demonstrated for various types of epitaxial microcrystals on Si substrates. These comprise partially fused SiGe microcrystals that are tens of micrometres high, multiple-quantum-well structures grown on SiGe microcrystals and pyramid-shaped GaAs/Ge microcrystals on top of Si micropillars.

Název v anglickém jazyce

The Radon transform as a tool for 3D reciprocal-space mapping of epitaxial microcrystals

Popis výsledku anglicky

This work presents a new approach suitable for mapping reciprocal space in three dimensions with standard laboratory equipment and a typical X-ray diffraction setup. The method is based on symmetric and coplanar high-resolution X-ray diffraction, ideally realized using 2D X-ray pixel detectors. The processing of experimental data exploits the Radon transform commonly used in medical and materials science. It is shown that this technique can also be used for diffraction mapping in reciprocal space even if a highly collimated beam is not available. The application of the method is demonstrated for various types of epitaxial microcrystals on Si substrates. These comprise partially fused SiGe microcrystals that are tens of micrometres high, multiple-quantum-well structures grown on SiGe microcrystals and pyramid-shaped GaAs/Ge microcrystals on top of Si micropillars.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/LQ1601" target="_blank" >LQ1601: CEITEC 2020</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Applied Crystallography

ISSN

1600-5767

e-ISSN

—

Svazek periodika

55

Číslo periodika v rámci svazku

August

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

14

Strana od-do

823-836

Kód UT WoS článku

000837727900012

EID výsledku v databázi Scopus

2-s2.0-85135604952